Infineon Technologies Ag

Air Products and Chemicals, Inc.

Imec Vzw

Soitec

S.o.i.tec Silicon on Insulator Technologies

Interuniversitair Microelektronica Centrum (imec)

Bernd Kolbesen

Hans-Joachim Schulze

Gerhard Schmidt

Paul Mertens

Rita Vos

Oliver Doll

Alexandra Abbadie

Albrecht Fester

Jochen Maehliss

A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.

Semiconductor device and substrate with chalcogen doped region

A chromium-free etching composition suitable for treating various silicon-containing surfaces, including strained silicon on insulator surfaces as well as stressed silicon surfaces. The etching composition invention includes hydrofluoric acid, nitric acid, acetic acid and an alkali iodide, preferably potassium iodide, present in an amount of 1 mmol/100 ml or more.

Etching composition, in particular for strained or stressed silicon materials, method for characterizing defects on surfaces of such materials and process of treating such surfaces with the etching composition

An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices.

The present invention relates to a method for characterizing defects on silicon surfaces, such as silicon wafers, a method for treating silicon surfaces with an etching solution, and an etching solution to be employed in the treating and defect characterization of such silicon wafer surfaces.

Methods for characterizing defects on silicon surfaces and etching composition and treatment process therefor

The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a'), wherein q is equal to 1, 2 or 3; wherein R, Rand Rare independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate. 

Semiconductor cleaning solution

The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate 

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Taufkirchen, Germany

Bernd Kolbesen