Deutschetelekom Ag

Bernd Klepser

Hartmut Hillmer

A method and device for tuning the wavelength of an optoelectronic component arrangement including at least two optoelectronic components. The characteristic wavelength for each optoelectronic component is adjusted using a respective resistance device which is connected between a common voltage/power source and a respective heating device associated with each optoelectronic component. Heating capacity is modified by changing the overall resistance of the respective resistance device (RM) in order to adjust wavelength. The wavelength of semiconductor lasers, filters, wavelength multiplexers and waveguides may be tuned.

Method and deivce for tuning the wavelength of an optoelectronic component arrangement

A method of wavelength tuning an opto-electronic component arrangement with at least two opto-electronic components is disclosed. The method includes the step of setting a characteristic wavelength for each opto-electronic component by selectively modifying a resistance of a conductor of a resistance heater and/or by selectively modifying a resistance of a resistor arrangement connected upstream from the resistance heater. The method, which minimizes costs, is aimed at wavelength tuning of semiconductor lasers, optical amplifiers, filters, wavelength multiplexers and optical fibers.

Method for syntonizing the wave lengths of an arrangement of optoelectronic components

The present invention provides an optoelectronic apparatus operating on different wavelength channels, such that the individual wavelength channels are individually variable in wavelength. The optoelectronic apparatus may be based on multisectioning of at least one bent waveguides is realized in one embodiment of the present invention by at least one isolation trench over the bent waveguide, the trench having a resistance of at least 10 ohms between a first and second individual section, wherein the first and the second sections can be supplied with an individual control current. The arrangement and depth of the at least one isolation trench corresponds with the bend of the at least one bent waveguides, wherein a bending function y,(x) of the at least one bent waveguide is determined according to model calculation-assisted optimizations.

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Meiningen, Germany

Bernd Klepser