Institut Fur Mikroelektronik Stuttgart

Institut Fur Mikroelektronik

Bernd H&ouml;fflinger

Ulrich Seger

Uwe Apel

Florian Letzkus

Reinhard Springer

Hans L&ouml;schner

J&ouml;rg Butschke

Elisabeth Penteker

Harald Richter

What is described here is a method of analog signal processing of video signals from picture elements arranged in an array, which are adapted for discrete scanning in terms of time, using a resistive network, the so-called electronic retina, having a two-dimensional field structure including a number of lines m smaller than the number of lines p of the picture element array, wherein the video signals are transmitted from the picture elements in the electronic retina by lines in such a manner that, starting with the first line of picture elements, the video signals are transmitted into the first line of said electronic retina until after the transmission of the video signals from the m-th line of the picture element arrays into the m-th line of said electronic retina the picture elements of the m&plus;1 line of the picture element array are transmitted into the electronic retina, starting again with the first line, until the p-th line of the picture element array is transmitted in a roll-over manner into the electronic retina, and that between every two successive operations of roll-over transmission of video signals to said electronic retina the respective retina lines are read out via an independent signal line without any influence on the transmission operation.

Method of and device for analog signal processing

The invention relates to a MOS transistor for a photo cell, comprising a semiconductor substrate on which a gate electrode, a drain electrode and a photosensitive source region are configured. An oxide layer is arranged between the gate electrode and the substrate, and in the active region of the MOS transistor this oxide layer is formed as thin oxide film while it is configured as thick oxide film in a passive region. The inventive transistor is distinguished by the provisions that the gate electrode comprises a closed annular section in the active region of the MOS transistor, and that either the drain electrode or the photosensitive source region is arranged within the annular section of the gate electrode so that current will only flow in the active region.

MOS-transistor for a photo cell

Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.

Method of producing large-area membrane masks

Growing community of inventors

Sindelfingen, Germany

Bernd Höfflinger

Growing community of inventors

Sindelfingen, Germany

Bernd H&ouml;fflinger

Bernd Höfflinger