Infineon Technologies Ag

Bernd Foeste

Thoralf Kautzsch

Boris Binder

Stefan Kolb

Marco Mueller

Dirk Meinhold

Ben Rosam

Andreas Thamm

Bernhard Winkler

A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.

Semiconductor structure with lamella defined by singulation trench

A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.

Method of providing a semiconductor structure with forming a sacrificial structure

A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.

Acceleration sensor

A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.

A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.

Semiconductor device including a pressure sensor

A test circuit arrangement for testing latch units is provided which includes a) a voltage generator configured to adjust a voltage potential difference between a first ground line and a second ground line of the latch units and/or to adjust a voltage potential difference between a first supply voltage line and a second supply voltage line of the latch units; b) combiner configured to combine logical outputs of the latch units; and c) determiner configured to determine the voltage potential difference between the first ground line and the second ground line and/or the voltage potential difference between the first supply voltage line and the second supply voltage line in a state when all of the latch units have identical logical outputs.

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Dresden, Germany

Bernd Foeste