Basf Aktiengesellschaft

U.S. Philips Corporation

Bernd F Hoffmann

Gerhard Wegner

Klemens Mathauer

Detlev F Hennings

Harald Fuchs

Wolfgang Schrepp

Albrecht Vogel

Rainer Erbach

Matthias Schaub

Markus Nutto

Stefan Schwiegk

In a miniaturizable, capacitively measuring chemical semiconductor-based sensor system consisting of a sensor and a reference element which are to be brought into contact with the electrolyte to be measured, the reference element being connected in series with the sensor, the reference element consists of a highly doped semiconductor substrate or metal/semiconductor substrate which is covered with a membrane, and the sensor consists of an insulator/semiconductor substrate which is coated with a sensitive membrane, and the sensitive membrane of the sensor is more sensitive than that of the reference element. The sensor and the reference element of this sensor system may either be applied to one and the same chip or consist of individual components which are readily interchangeable with one another.

Capacitively measuring chemical sensor system

The invention relates to a reference electrode for chemical sensors based on ion-selective field-effect transistors (CHEMFETs) in an electrolyte/insulator/semiconductor system. The reference electrode is essentially composed of a polyglutamate-coated insulator/semiconductor substrate or of a polyglutamate-coated phthalocyaninato-polysiloxane polymer film applied to an insulator/semiconductor substrate.

Reference electrode for chemical sensors

Non-linear voltage-dependent resistor having a ceramic sintered body based on zinc oxide as a resistance material which is doped with at least one alkaline earth metal, rare earth metal and metal of the iron group present as an oxide and is doped with at least one of the metals from the group aluminum, gallium and/or indium and having electrodes provided on oppositely located major surfaces of the sintered body, in which the sintered body is constructed from several layers having at least a layer structure of one layer of resistance material on a carrier layer based on zinc oxide which has a higher electric conductivity as compared with the resistance material, as well as a method of manufacturing same.

Non-linear voltage-dependent resistor

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Rheinstetten, Germany

Bernd F Hoffmann