International Business Machines Corporation

Infineon Technologies Ag

Freescale Semiconductor,inc.

Nxp Usa, Inc.

Bernd E Kastenmeier

Andreas Knorr

Vincent James McGahay

Habib Hichri

Jeffrey R Marino

Lawrence Alfred Clevenger

Theodorus E Standaert

Timothy Joseph Dalton

Kevin Shawn Petrarca

Richard Paul Volant

Chandrasekhar Narayan

Michael Wayne Lane

Naim Moumen

Ian D Melville

Kelly Malone

Matthew S Angyal

Brett H Engel

Peter E Biolsi

Xavier Hours

Brian Wayne Herbst

Arthur W Martin

Karl Wimmer

Sanjit Kumar Das

David M Grochowski

Raman E Evazians

A method of designing an integrated circuit is described. The integrated circuit comprises a plurality of circuit components, including one or more functional components and one or more tile shapes. A pcell instance may be defined to specify a functional component along with one or more tile shapes. The tile shapes are thus associated with the functional component. A netlist may be arranged to specify interconnections between the functional components of the integrated circuit as well as electrical interactions between the tile shapes and functional components. A computer program product for carrying out the method is also described.

Method of designing an integrated circuit and computer program product

A device structure includes an inter-level dielectric, a via, a first conductive trench, and a second conductive trench. The inter-level dielectric has a top surface and a bottom surface. The via extends from the top surface to the bottom surface. The first conductive trench extends from the top surface to a first depth below the top surface. The second conductive trench extends from the top surface to a second depth below the top surface, wherein the second depth is above the bottom surface and below the first depth.

Methods of forming semiconductor devices having conductors with different dimensions

A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized to effectuate a cleaning of an edge portion of a wafer.

Method for treating a wafer edge

Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.

Interlevel dielectric layer and metal layer sealing

A semiconductor device and method of manufacture thereof. A porous dielectric material is deposited over a workpiece. The porous dielectric material is patterned, and a photosensitive material is spun-on over the patterned porous dielectric material. A portion of the photosensitive material is formed over, and/or soaks into sidewalls of the porous dielectric material pattern, forming a barrier region of photosensitive material. The photosensitive material is developed, leaving the sidewalls of the porous dielectric material pattern sealed by the barrier region of photosensitive material. A liner is deposited over the porous dielectric material, and a conductive material such as copper is used to fill the pattern in the porous dielectric material. Diffusion of copper into the pores of the porous dielectric material is prevented by the barrier region.

Sidewall sealing of porous dielectric materials

Methods of forming air gaps or porous dielectric materials between interconnects of integrated circuits and structures thereof. Air gaps or highly porous dielectric material having a dielectric constant of close to or equal to 1.0 are formed in a first region but not a second region of an interconnect layer. The air gaps or highly porous dielectric material are formed by depositing a first insulating material comprising an energy-sensitive material over a workpiece, depositing a second insulating material over the first insulating material, and exposing the workpiece to energy. At least a portion of the first insulating material in the first region is removed through the second insulating material. Structurally stable insulating material is disposed between conductive lines in the second region of the workpiece, providing mechanical strength for the integrated circuit.

Air gaps between conductive lines for reduced RC delay of integrated circuits

An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

Structure and method for reducing thermo-mechanical stress in stacked vias

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Austin, TX, United States of America

Bernd E Kastenmeier