Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Bernd Dorsch

Hans-Peter Hohe

Dieter Seitzer

A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.

Semiconductor force/torque sensor

A sensor arrangement for detecting a variable that is to be measured, has at least two substantially similar sensor elements. These sensor elements each produce an output signal in response to the variable to be measured, the output signals having a Hall voltage disturbance component. The two sensor elements are orientated in relation to each other in such a way that a sensor signal can be produced by a combination of their output signals, the Hall voltage disturbance components being compensated in the sensor signal.

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Unterleinleiter, Germany

Bernd Dorsch