Infineon Technologies Ag

Siemens Aktiengesellschaft

Bernd Borchert

Bernhard Stegmuller

Horst Baumeister

Roland Gessner

Eberhard Veuhoff

Gundolf Wenger

Philipp Steinmann

A semiconductor laser chip has a semiconductor laser element and a beam shaper integrated into the semiconductor laser chip and serving for shaping a laser beam emitted by the semiconductor laser element.

Semiconductor laser chip and method for fabricating a semiconductor laser chip

A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Masking method for producing semiconductor components, particularly a BH laser diode

A monolithically integrated combination of a laser diode and a modulator is provided, in which one region of a common active layer structure is used for the laser and an adjacent region of that layer structure is used for the modulator, and in which the layer structure is an MQW structure with asymmetric potential wells decoupled from one another. The material compositions in the potential wells each have the smallest energy bandgap on the n-type side and are matched to the layer structure in such a way that, when the potential difference is applied in the reverse bias direction, a blue shift of the absorption edge beyond the laser wavelength takes place.

Laser diode/modulator combination

DFB laser diode structure having complex optical grating coupling

Growing community of inventors

Moosburg, Germany

Bernd Borchert