Infineon Technologies Ag

Bernd Bitnar

Hans-Joachim Schulze

Moriz Jelinek

Daniel Schloegl

Christian Krueger

Benedikt Stoib

Oana Julia Spulber

Thomas Waechtler

A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

Semiconductor device including a field stop region

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Bannewitz, Germany

Bernd Bitnar