Imec Vzw

Universiteit Gent

Katholieke Universiteit Leuven, Ku Leuven R&d

Bernardette Kunert

Niamh Waldron

Robert Langer

Joris Van Campenhout

Maria Ioanna Pantouvaki

Yves Mols

Liesbeth Witters

Amey Mahadev Walke

Weiming Guo

Geert Eneman

Luc Haspeslagh

Dries Van Thourhout

Ashwyn Srinivasan

Philippe Soussan

Didit Yudistira

Vasyl Motsnyi

Stefano Guerrieri

Olga Syshchyk

Yuting Shi

Younghyun Kim

Marina Baryshnikova

A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.

Methods for improved III/V nano-ridge fabrication on silicon

A method for forming a III-V construction over a group IV substrate comprises providing an assembly comprising the group IV substrate and a dielectric thereon. The dielectric layer comprises a trench exposing the group IV substrate. The method further comprises initiating growth of a first III-V structure in the trench, continuing growth out of the trench on top of the bottom part, growing epitaxially a sacrificial second III-V structure on the top part of the first III-V structure, and growing epitaxially a third III-V structure on the sacrificial second III-V structure. The third III-V structure comprises a top III-V layer. The method further comprises physically disconnecting a first part of the top layer from a second part thereof, and contacting the sacrificial second III-V structure with the liquid etching medium.

Integration of a III-V construction on a group IV substrate

A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

Monolithic III-V-on-silicon opto-electronic phase modulator with a ridge waveguide

The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

Method of forming a semiconductor device structure

A method for forming a semiconductor structure comprising: providing a silicon substrate having a first and a second flat top surface belonging to a first and a second substrate region respectively, the first top surface being lower than the second top surface, thereby forming a step delimiting the first and the second substrate region. The method further comprises forming, at least partially, one or more silicon semiconductor devices in the second substrate region, and forming, at least partially, one or more III-V semiconductor devices in the first substrate region.

Integration of a III-V device on a Si substrate

The disclosed technology generally relates to integrated circuit devices having at least one transistor, and methods of fabricating the same. In one aspect, an integrated circuit device can be produced from a silicon substrate and can include at least one nano-ridge transistor formed from III-V semiconducting crystal portions. The III-V portions can be grown epitaxially from the silicon substrate using an intermediate portion which can be adapted to produce aspect ratio trapping. The nano-ridge transistor can have a reduced footprint on the silicon substrate, may be adapted for power RF applications, and can be combined with MOS or CMOS transistors within one and a same integrated circuit.

Integrated circuit including at least one nano-ridge transistor

A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.

III-V semiconductor waveguide nanoridge structure

Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Active-passive waveguide photonic system

The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. The semiconductor device additionally includes a filling isolation structure having a portion formed in the opening and a portion protruding above the dielectric isolation layer, wherein the filling isolation structure comprises a dielectric filling layer. The semiconductor device additionally includes a dielectric layer formed on the dielectric isolation layer, wherein the dielectric layer and the dielectric filling layer have top surfaces that are substantially co-planar to form a common top surface. The semiconductor device further includes a first vertical channel layer laterally interposed between and in contact with the dielectric layer and the dielectric filling layer at a first side of the dielectric filling layer, wherein the first vertical channel layer extends above the common top surface.

High aspect ratio channel semiconductor device and method of manufacturing same

The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group IV, a group III-IV or a group II-VI semiconductor material, to a handling wafer. The method includes forming the active layer on a sacrificial layer of the donor wafer, bonding the donor wafer to the handling wafer, and selectively etching the sacrificial layer to remove the donor wafer from the handling wafer, thereby leaving the active layer on the handling wafer.

Method of transferring a semiconductor layer

Disclosed herein is a semiconductor structure including: (i) a monocrystalline substrate having a top surface, (ii) a non-crystalline structure overlying the monocrystalline substrate and including an opening having a width smaller than 10 microns and exposing part of the top surface of the monocrystalline substrate. The semiconductor structure also includes (iii) a buffer structure having a bottom surface abutting the part and a top surface having less than 10threading dislocations per cm, the buffer structure being made of a material having a first lattice constant. The semiconductor structure also includes (iv) one or more group IV monocrystalline structures abutting the buffer structure and that are made of a material having a second lattice constant, different from the first lattice constant.

Strained group IV channels

The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a III-V structure abutting the silicon monocrystalline substrate. The semiconductor structure includes an InGaAs structure overlaying the III-V structure, where a is from 0.40 to 1, b from 0 to 0.60, and a+b equal to 1.00. The III-V structure has a top surface facing away from the silicon substrate. The top surface is GaXPSbZ, where X includes one or more group III elements other than Ga and Z is one or more group V elements other than P or Sb. g is from 0.80 to 1.00, x is from 0 to 0.20, z is from 0 to 0.30, p is from 0.10 to 0.55, and s is from 0.50 to 0.80, g+x is equal to 1.00 and p+s+z is equal to 1.00.

Growing community of inventors

Wilsele, Belgium

Bernardette Kunert