Applied Materials, Inc.

Bernard Woods

Nicholas J Bright

Michael T Wauk

Jose-Antonio Marin

Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.

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East Sussex, United Kingdom

Bernard Woods