Commissariat a L'energie Atomique

Bernard Schaub

Jean Gallet

Sylvain Paltrier

Alain Fillot

Jean Marine

Daniel Bensahel

Luc Audaire

Jean Claude Peuzin

Bernard Pelliciari

Yves Malmejac

Jacqueline Faure

The structure comprises an electrically and thermally insulating polyimide layer, infrared sensors which are insulated from one another and have a polyvinyl pyroelectric film, whose face in contact with the polyimide is equipped with two comb-shaped electrodes, whose teeth are imbricated, the pyroelectric film being polarized in a plane parallel to the film and in directions parallel and perpendicular to the comb teeth, an integrated circuit having a face in contact with the polyimide layer, equipped with the reading circuit, and electric contact zones completely traverse the polyimide layer and connect the electrodes of each sensor to a reading circuit.

Monolithic detection or infrared imaging structure and its production

The invention relates to a process for the preparation of a binary initial solvent zone for the crystallization in monocrystal form of a ternary or quaternary compound of given composition and containing Cd and Hg. It consists of choosing on the phase equilibrium diagram of the compound, the Cd and Hg concentration and the temperature which crystallization is to take place. When raised to this temperature, the initial solvent zone is able to dissolve the compound until a solvent zone in thermodynamic equilibrium therewith is obtained and on the basis of which it is possible to bring about crystallization. The composition of the initial solvent zone and the temperature at which it is to be prepared are determined on the diagram.

Process for producing a monocrystal of a compound by crystallizing a

Process for the preparation of a polycrystalline alloy for producing monocrystals by passage in a solvent zone. The compound is completely melted by heating it to a temperature above its melting point and for a time sufficient for the homogenization of the liquid. This is followed by a cooling of the liquid by bringing it to a temperature below the melting point thereof. The sudden rise of the temperature occurring at the end of the superfusion of the liquid is monitored and the mixture then undergoes sudden tempering bringing about the instantaneous solidification of the entity in the form of a homogeneous polycrystalline ingot.

Process for producing a polycrystalline alloy

Process for producing ternary or quaternary semiconductor compounds, particularly of formula Cd Hg Te or Cd Hg Te Se.

Process for producing ternary or quaternary semiconductor compounds

Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations:

Method for the manufacture of light emitting and/or photodetective diodes

A method of preparation of a ternary or quaternary alloy composed of the elements A.sup.1 A.sup.2 A.sup.3 (ternary alloy) or the elements A.sup.1 A.sup.2 A.sup.3 A.sup.4 (quaternary alloy) consists of the successive steps of preparation of one or a number of binary alloys such as A.sup.1 A.sup.2, purification of the binary alloys by zone melting, placing of the binary alloy or alloys which are in the solid state together with the other constituent elements of the alloy within a container in the presence of a solvent, crystallization of the ternary or quaternary alloy by melting all the elements within the container and recrystallization in the presence of the solvent.

Method of preparation of semiconducting compounds

In a method of growing of single crystals which are practically free from misorientation, namely single crystals of metals which exhibit an allotropic change of state at a temperature below their melting points, single crystals of the raw metal which has undergone unidirectional solidification are heated to a temperature between the allotropic transformation point and the melting point of the metal, the single crystals are maintained during a predetermined period in the vicinity of this temperature and cooled to a temperature below the allotropic transformation point. The single crystals are then annealed in order to obtain complete recrystallization of the metal and finally cooled to room temperature.

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Grenoble, France

Bernard Schaub