General Electric Company

Bernard R Tuft

Edward G Tefft

Earl C Williams

George F Holbrook

A method for forming low stress recesses in bodies of semiconductor material involves damaging the body either thermally or mechanically in the area where the recess is to be formed followed by etching in either a plasma or chemical medium to remove the damaged body portion leaving a relatively stress-free slot or other recess. Such recesses are utilized as diffusion sites for rapid formation of diffusion regions through semiconductor wafers and for the subdivision of wafers into discrete devices.

Fast isolation diffusion

A method for forming an electrode on a semiconductor device is described. Where surface adjacent regions of differing dislocation densities are present, an initial mechanical abrading step followed by a plasma etching step produces a surface to which a metal layer may be applied with relatively uniform adherence characteristics.

Method for metallizing a semiconductor element

Disclosed is a breakage resistant semiconductor wafer and a method for the fabrication thereof. Intersecting grooves are formed on one side of the wafer to facilitate ultimate subdivision thereof. A portion, such as a peripheral portion, of the wafer remains ungrooved. The ungrooved portion substantially increases the strength of the wafer and prevents premature breakage. When it is desired to subdivide the wafer, laser scribe lines are formed on the opposite side of the wafer in registry with the grooves. In an alternate embodiment the second side of the wafer is also grooved. However, the grooves on the second side of the wafer traverse the entirety thereof.

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Scipio Center, NY, United States of America

Bernard R Tuft