Agere Systems Inc.

Lucent Technologies Inc.

Agere Systems Guardian Corp.

Agere Syatems Inc.

Bernard Lee Morris

Makeshwar Kothandaraman

John Christopher Kriz

Dipankar Bhattacharya

Yehuda Smooha

Bijit Thakorbhai Patel

Carol Ann Huber

Wayne E Werner

Thaddeus John Gabara

Stefan Allen Siegel

Jeffrey Jay Nagy

Antonio M Marques

Douglas D Lopata

Jonathan Herman Fischer

William Burdett Wilson

James T Clee

Martin J Gasper

Joseph E Simko

Duane J Loeper

James Guziak

Peter J Nicholas

Samuel Khoo

Brian C Lacey

Gregg R Harleman

A voltage translator circuit () includes an input stage () adapted for receiving an input signal referenced to a first voltage supply (VDD core), a latch () adapted for connection to a second voltage supply (VDD) and operative to at least temporarily store a logic state of the input signal, and a voltage clamp () coupled between the input stage () and the latch (). The voltage clamp () is operative to set a maximum voltage across the latch () to a first prescribed level and to set a maximum voltage across the input stage to a second prescribed level. The voltage translator circuit () generates a first output signal (II) at a junction between the latch () and the voltage clamp (). The voltage translator circuit generates a second output signal () at a junction between the voltage clamp () and the input stage ().

Voltage level translator circuit

An ESD protection circuit includes a first voltage clamp, connected between a first voltage supply node and a second voltage supply node of the circuit, and a second voltage clamp, connected between the second voltage supply node and a voltage return of the circuit. The first voltage supply node is adapted to receive a first voltage which is greater than a prescribed gate oxide reliability potential of the circuit. The second voltage supply node is operative to receive a second voltage which is less than the first voltage. The first voltage clamp is operative to clamp the first voltage on the first voltage supply node to a first value during an ESD event between the first and second voltage supply nodes, and the second voltage clamp is operative to clamp the second voltage on the second voltage supply node to a second value during an ESD event between the second voltage supply node and the voltage return.

Electrostatic discharge protection circuit

A compensated buffer circuit operative in one of at least a first mode and a second mode includes a plurality of output blocks and a plurality of predrivers, each of the predrivers having an output connected to an input of a corresponding one of the output blocks. Respective outputs of the output blocks are connected together and form an output of the buffer circuit. The output blocks are arranged in a sequence and are binary weighted such that a drive strength of a given one of the output blocks is about twice as large as a drive strength of an output block immediately preceding the given output block. Each of the predrivers selectively enables the corresponding output block connected thereto as a function of a control signal supplied to the predriver for compensating the buffer circuit for PVT variations to which the buffer circuit may be subjected. The respective control signals supplied to the predrivers collectively represent a binary code word, the binary code word in the second mode being equivalent to an arithmetic shift of the binary code word in the first mode.

Multiple-mode compensated buffer circuit

An integrated circuit comprises digital circuitry having at least one digital logic cell and at least one skew adjusting cell. The skew adjusting cell is configured to adjust the skew of a signal in the digital circuitry of the integrated circuit to a desired amount. The digital logic cell and the skew adjusting cell are selected from a cell library.

Integrated circuit with signal skew adjusting cell selected from cell library

A compensation circuit for compensating an output impedance of at least a first MOS device over PVT variations to which the first MOS device may be subjected includes a first current source generating a first current having a value which is substantially constant and a second current source generating a second current having a value which is programmable as a function of at least one control signal presented to the second current source. A comparator is connected to respective outputs of the first and second current sources and is operative to measure a difference between the respective values of the first and second currents and to generate an output signal indicative of relative magnitudes of the first current and the second current. A processor connected in a feedback arrangement between the comparator and the second current source receives the output signal generated by the comparator and generates the control signal for controlling the second current as a function of the output signal. The processor is operative to control the value of the second current so that the second current is substantially equal to the first current.

Enhanced output impedance compensation

A circuit for selectively bypassing a capacitive element includes at least one NMOS device selectively connectable across the capacitive element to be bypassed, and at least first and second PMOS devices. The PMOS devices are selectively connectable together in series across the capacitive element to be bypassed. The NMOS device provides a first bypass path and the first and second PMOS devices collectively provide a second bypass path.

Circuit for selectively bypassing a capacitive element

An IC having improved reliability includes at least first and second circuit blocks and at least first and second power domains, the first circuit block being connected to the first power domain and the second circuit block being connected to the second power domain. The IC further includes at least one control circuit configured to generate at least first and second control signals. The first control signal is operative to selectively connect the first power domain to a first voltage supply, and the second control signal is operative to selectively connect the second power domain to a second voltage supply. The IC includes at least first and second clamp circuits, the first clamp circuit being connected to the first power domain, the second clamp circuit being connected to the second power domain. Each of the clamp circuits is operative to prevent a voltage on a corresponding power domain from rising above a prescribed voltage level for the corresponding power domain.

Method and apparatus for improving reliability of an integrated circuit having multiple power domains

A buffer circuit is selectively operative in one of at least a first mode and a second mode as a function of a first control signal supplied to the buffer circuit. The buffer circuit includes interface circuitry operative to receive at least second and third control signals referenced to a first voltage level, and to generate an output signal referenced to a second voltage level, the second voltage level being greater than the first voltage level. The output signal is a function of the second control signal in the first mode and is a function of the third control signal in the second mode. The buffer circuit further includes at least first and second circuit portions coupled to the interface circuitry, each of the first and second circuit portions including at least one control input operative to receive the output signal generated by the interface circuitry.

Buffer circuit having multiplexed voltage level translation

An ESD protection circuit for protecting a circuit from an ESD event occurring between a first voltage supply node and a second voltage supply node associated with the circuit to be protected includes an MOS device having a gate terminal, a first source/drain terminal and a second source/drain terminal. The first source/drain terminal is connected to the first voltage supply node and the second source/drain terminal is connected to the second voltage supply node. The ESD protection circuit further includes a trigger circuit coupled to the gate terminal of the MOS device. The trigger circuit is configured to generate a control signal at the gate terminal of the MOS device for activating the MOS device during the ESD event. At least a portion of the trigger circuit is formed in a floating well which becomes biased to a voltage that is substantially equal to a first voltage when the first voltage is supplied to the first voltage supply node or to a second voltage when the second voltage is applied to the second voltage supply node, whichever voltage is greater.

Electrostatic discharge protection in a semiconductor device

A circuit having an enhanced input signal range includes a differential amplifier operative to receive at least first and second signals and to generate a difference signal at an output thereof which is a function of the difference between the first and second signals. The differential amplifier includes an input stage having at least first and second transistors having a first threshold voltage associated therewith and being operative to receive the first and second signals, respectively, and a load including at least third and fourth transistors having a second threshold voltage associated therewith, the first threshold voltage being greater than the second threshold voltage. The circuit further includes an output stage coupled to the differential amplifier and operative to receive the difference signal and to generate an output signal of the circuit that is indicative of the difference signal and is referenced to the supply voltage of the circuit.

Circuit having enhanced input signal range

A buffer circuit having enhanced overvoltage protection includes core buffer circuitry couplable to a first voltage source having a first voltage level. The core buffer circuitry is configured to receive a first signal and to generate a second signal which is a function of the first signal. The buffer circuit further includes a protection circuit coupled between the core buffer circuitry and a signal pad. The protection circuit is operative: (i) to clamp the first signal to about the first voltage level when a third signal received at the signal pad exceeds the first voltage level by a first amount; and (ii) to generate the first signal being substantially equal to the third signal when the third signal is less than or substantially equal to the first voltage level.

Buffer circuit with enhanced overvoltage protection

A voltage level translator circuit for translating an input signal referenced to a first voltage supply to an output signal referenced to a second voltage supply includes an input stage for receiving the input signal, the input stage including at least one transistor device having a first threshold voltage associated therewith. The voltage level translator circuit further includes a latch circuit operative to store a signal representative of a logic state of the input signal, the latch circuit including at least one transistor device having a second threshold voltage associated therewith, the second threshold voltage being greater than the first threshold voltage. A voltage clamp circuit is connected between the input stage and the latch circuit. The voltage clamp circuit is operative to limit a voltage across the input stage, an amplitude of the voltage across the input stage being controlled as a function of a voltage difference between the first and second voltage supplies.

Voltage level translator circuit with wide supply voltage range

A comparator circuit having reduced pulse width distortion includes a differential amplifier operative to receive at least first and second signals and to amplify a difference between the first and second signals. The differential amplifier generates a difference signal at an output thereof which is a function of the difference between the first and second signals. An output stage is included in the comparator circuit for receiving the difference signal and for generating an output signal of the comparator circuit, the output signal being representative of the difference signal, the output stage having a switching point associated therewith. The comparator circuit further includes a voltage source coupled to the output of the differential amplifier. The voltage source is operative to generate a reference signal for establishing a common-mode voltage of the difference signal generated by the differential amplifier. The reference signal is substantially centered about the switching point of the output stage and substantially tracks the switching point over variations in process, voltage and/or temperature conditions to which the comparator circuit is subjected.

Comparator circuit having reduced pulse width distortion

A buffer circuit operative at multiple power supply voltage levels includes first and second buffers, the first buffer being configured for operation with a first voltage source and the second buffer being operative with a second voltage source. The buffer circuit further includes a controllable isolation circuit. An output of the first buffer connects to an external pad of the buffer circuit, and an output of the second buffer connects to the pad via the isolation circuit. The buffer circuit is selectively operative in at least a first mode or a second mode in response to at least a first control signal. The isolation circuit is operative in the first mode to substantially isolate the second buffer from the external pad and is operative in the second mode to connect the output of the second buffer to the external pad.

Buffer circuit with multiple voltage range

A circuit for defining a voltage potential of a floating well in which is formed at least one metal-oxide-semiconductor device includes a sense circuit operative to detect a voltage at a node to which the floating well is connected and to generate a control signal indicative of whether the voltage at the node is substantially within a voltage range. A lower value of the voltage range is substantially equal to a threshold voltage below a first supply voltage of the circuit. An upper value of the voltage range is substantially equal to a threshold voltage above the first supply voltage. The circuit for defining the voltage potential of the floating well further includes a voltage generator circuit operative to receive the control signal and to generate a bias signal for setting a voltage potential of the well in response to the control signal, the bias signal being controlled throughout the voltage range.

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Emmaus, PA, United States of America

Bernard Lee Morris