Thomson-csf

Bernard Leclerc

Alain Bert

Yves Archambault

That face of the non-epitaxied substrate of high resistivity which supports the junction 3 formed by the planar method is treated by a mesa attack in such a way that it is smaller than the opposite face 7. An insulating ring 4 covers the periphery of the junction and projects beyond the substrate. This ring has external dimensions smaller than those of the face 7 beyond which it projects. A metallic layer 6 ensuring an ohmic contact covers in particular the lateral walls of the diode created by the mesa attack except for those zones of these walls beyond which the insulating ring 4 projects. This metallization of the lateral walls acts as an electrode and connects the diodes generally formed on one and the same substrate to one another.

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Paris, France

Bernard Leclerc