Georgia Tech Research Corporation

The University of Arizona

Other

California Institute of Technology

Nitto-denko Corporation

Purdue Research Foundation

Northwestern University

United States of America, As Represented by the Secretary of Agriculture

Princeton University

E-vision, LLC

Arizona Board of Regents, a Body Corporate

Bernard Kippelen

Seth R Marder

Canek Fuentes-Hernandez

Nasser N Peyghambarian

Benoit Domercq

Michiharu Yamamoto

Stephen Barlow

Ghassan E Jabbour

Peter J Hotchkiss

J Kevin Cammack

Steve Barlow

Yinhua Zhou

Zesheng An

Yadong Zhang

Carlos Zuniga

Wen-Fang Chou

Boris Volodin

Eric Hendrickx

Do Kyung Hwang

Tobin Jay Marks

Joshua N Haddock

Simon Christopher Jones

Peng Wang

Jeffrey Paul Youngblood

Joseph W Perry

Henry K Hall

Gregory David Durgin

Marcus Weck

Jian-Yang Cho

Andreas Haldi

Robert J Moon

Antoine Kahn

Asha Sharma

Anne B Padias

Gerald Meredith

Lauren E Polander

Xiaojia Jia

Naoya Aizawa

Raghunath R Dasari

Yulia A Getmanenko

Jungbae Kim

Mathieu Fenoll

Benoit Domerq

Alpay Kimyonok

Philoseok Kim

Junji Kido

Xiaohong Zhang

Felipe A Larrain

Jungsheng Yu

Gabriel Ramos-Ortiz

Myoungsik Cha

Gaelle Deshayes

David Mathine

Julie Leroy

Vladimir Kolesov

Xuyang He

Joshua E Malinsky

Sung-Jin Kim

Jens Meyer

Scott R Lyon

Shree Prakash Tiwari

Jae Won Shim

Klaus Meerholz

James June Fan Hsu

(nfn) Sandalphon

Boris L Volodin

Provided is a semiconductor device having a dual gate field-effect transistor and a sensor in electrical communication with the transistor. The field-effect transistor can have a first gate electrode, a second gate electrode, a source electrode, a drain electrode, a semiconductor layer with parts in contact with the source and drain electrodes, a bi-layer gate insulator, and a second gate insulator. The bi-layer gate insulator can include a first layer and a second layer, the first layer located between the second layer and a first side of the semiconductor layer, the second layer located between the first layer and the first gate electrode. The second gate insulator can be located between the second gate electrode and a second side of the semiconductor layer, and the sensor can be in electrical communication with the second gate electrode.

High sensitivity stable sensors and methods for manufacturing same

The disclosed technology includes systems, devices, and methods associate with producing an organic semiconductor film having electrical dopant molecules distributed to a controlled depth. In an example implementation, a semiconductor device is provided. The semiconductor device can include a first substrate and an organic semiconductor film disposed on the first substrate. The organic semiconductor film includes a first region characterized by electrical dopant molecules distributed to a controlled depth with respect to a first surface of the organic semiconductor film. The semiconductor device further can include an electrode in contact with at least a portion of the first region of the organic semiconductor film.

Devices with organic semiconductor layers electrically-doped over a controlled depth

An optical device capable of an ultrafast and large change of its reflection or absorption coefficient upon being excited by an ultrafast optical pulse with wavelength in the visible, near-infrared, or infrared spectral regions. The optical device includes, in sequential order, a first thick metallic layer, a first dielectric layer, a second thin metallic layer, and a second dielectric layer. The optical device acts as a nonlinear mirror that presents a large reflectance at low irradiance and a low reflectance at large irradiance. The optical device can further act as a nonlinear mirror that presents a linear and nonlinear reflectance with a large angular bandwidth.

Devices, systems and methods for ultrafast optical applications

A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.

Multi-layer gate dielectric field-effect transistor and manufacturing process thereof

Recyclable organic solar cells are disclosed herein. Systems and methods are further disclosed for producing, improving performance, and for recycling the solar cells. In certain example embodiments, the recyclable organic solar cells disclosed herein include: a first electrode; a second electrode; a photoactive layer disposed between the first electrode and the second electrode; an interlayer comprising a Lewis basic oligomer or polymer disposed between the photoactive layer and at least a portion of the first electrode or the second electrode; and a substrate disposed adjacent to the first electrode or the second electrode. The interlayer reduces the work function associated with the first or second electrode. In certain example embodiments, the substrate comprises cellulose nanocrystals that can be recycled. In certain example embodiments, one or more of the first electrode, the photoactive layer, and the second electrode may be applied by a film transfer lamination method.

Recyclable organic solar cells on substrates comprising cellulose nanocrystals (CNC)

The inventions describe disclosed and described herein relate to ambipolar small molecule host materials for guest phosphorescent metal complexes. Methods of making the ambipolar small molecules are also described. These ambipolar small molecules, which comprise both an oxadiazole and one or more carbazole groups, can be used to make the emission layers of unexpectedly efficient OLED devices containing the materials of the inventions, wherein (I) at least one of the R, Rand Rgroups is an optionally substituted carbazole group. 

Ambipolar small molecule hosts for phosphorescent guest emitters

According to an exemplary embodiment of the invention, systems and methods are provided for producing low work function electrodes. According to an exemplary embodiment, a method is provided for reducing a work function of an electrode. The method includes applying, to at least a portion of the electrode, a solution comprising a Lewis basic oligomer or polymer; and based at least in part on applying the solution, forming an ultra-thin layer on a surface of the electrode, wherein the ultra-thin layer reduces the work function associated with the electrode by greater than 0.5 eV. According to another exemplary embodiment of the invention, a device is provided. The device includes a semiconductor; at least one electrode disposed adjacent to the semiconductor and configured to transport electrons in or out of the semiconductor.

Systems and methods for producing low work function electrodes

The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the 'NDI-hAr-NDI' oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the 'R' terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.

Naphthalene-diimide-heterocycle-naphthalene diimide oligomers as organic semiconductors and transistors therefrom

A device including an electrode, the electrode having a surface; a molecule bound to the surface of the electrode through a binding group; an organic electronic material in electrical contact with the electrode, wherein the molecule comprises at least one fluorinated aryl group, wherein the electrode contains a transparent conductive metal oxide, a carbon nanotube, or graphene.

Stable electrodes with modified work functions and methods for organic electronic devices

This invention relates generally to norbornene-monomer, poly(norbornene)homopolymer, and poly(norbornene)copolymer compounds containing a functionalized carbazole side chain, having desirable solution processability and host characteristics. It also relates to hole transport and/or electron blocking materials, and to organic host materials for an organic luminescence layer, an OLED device, and compositions of matter which include these compounds.

Carbazole-based hole transport and/or electron blocking materials and/or host polymer materials

Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same

Briefly described, embodiments of this disclosure include perylenetetracarboxylic diimide charge-transport materials, methods of forming perylenetetracarboxylic diimide charge-transport materials, and methods of using the perylenetetracarboxylic diimide charge-transport materials.

Perylene charge-transport materials, methods of fabrication thereof, and methods of use thereof

Briefly described, embodiments of this disclosure include coronene charge-transport materials, methods of forming coronene charge-transport materials, and methods of using the coronene charge-transport materials.

Coronene charge-transport materials, methods of fabrication thereof, and methods of use thereof

Briefly described, embodiments of this disclosure include transition-metal charge-transport materials, methods of forming transition-metal charge-transport materials, and methods of using the transition-metal charge-transport materials.

Transition-metal charge-transport materials, methods of fabrication thereof, and methods of use thereof

Embodiments according to the present invention comprised RFID tags comprised of components disposed on a flexible conformal substrate. The substrate may be substantially transparent or opaque and the components may be comprised of organic electronic components. Components and circuits may be manufactured using thin-film deposition processes or by deposition of metal-containing inks using inkjet technology. Exemplary use of an embodiment according to the present invention is as a component in an on-vehicle radio-frequency (RF) automated toll system.

Thin flexible radio frequency identification tags and subsystems thereof

Growing community of inventors

Decatur, GA, United States of America

Bernard Kippelen