Bae Systems Information and Electronic Systems Integration Inc.

Bernard J Schmanski

Kanin Chu

Robert Actis

Robert J Lender, Jr

David E Meharry

Patrick D McKivergan

Daniel Charles Boire

Hong Lu

Pane-Chane Chao

Randall R Lapierre

Carlton T Creamer

Steven Rajkowski

Sue May Jessup

John Bucceri

Michael Patrick Doran

An ultra-wideband radio frequency (RF) apparatus for combining and/or dividing RF signals. RF apparatus includes a circuit board, a communication cable that operably engages with the circuit board, at least two transmission lines that are formed on the circuit board and operably engages with the communication cable, and at least two connectors that operably engages with the at least two transmission lines. The RF apparatus is operable in a first configuration and a second configuration. When the RF apparatus is provided in the first configuration, the RF apparatus is operable to divide a first RF signal into at least two RF signals. When the RF apparatus is provided in the second configuration, the RF apparatus is operable to combine the at least two RF signals into a second RF signal. The RF apparatus is capable of achieving a low insertion loss less than 1 dB over a bandwidth greater than 20:1.

Power combining for high power amplifiers

Techniques and architecture are disclosed for a method for making a custom circuit comprising forming a common wafer template, selecting at least two elements of the common wafer template to be chosen elements, and adding at least one metal layer to interconnect the chosen elements to form a circuit. The common wafer template includes a plurality of transistors, a plurality of resistors, a plurality of capacitors, and a plurality of bond pads. Final circuit customization of the common wafer template is accomplished by adding at least one metal layer that forms interconnects to passive and active elements in the template in order to complete the circuit.

Flexible impedance network system

In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned metalized strip, with the substrate having a patterned metalized layer on the back side that is provided with a keep away zone dimensioned to provide impedance matching for RF energy coupled through the substrate to the semiconductor device while at the same time permitting the heat generated by the semiconductor device to flow through the high thermal conductivity substrate, through the back side of the substrate and to a beat sink.

Method and design of an RF thru-via interconnect

Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package. In some instances, control circuitry is provided to control which chipset die(s) are enabled/disabled, thus providing control over gain and power levels of the output signal(s).

Ultra-wideband high power amplifier architecture

The replacement and elimination of duplexers in a tightly coupled dipole phased array starts with transmit and receive functions physically separated and having different antenna port feeds. The simple coupling network used with tightly coupled dipole arrays is replaced by a state switch which alternates between a coupling state and a dipole feed connection state. The basic method can be applied to antenna apertures of various kinds, including both linear and dual polarized versions. The ability to locate state switches at various nodes in tightly coupled dipole phased arrays permits flexibility in antenna design and eliminates bulky and lossy components, simplifies the design requirements and allows independent optimization of the components.

Method and apparatus for elimination of duplexers in transmit/receive phased array antennas

Growing community of inventors

Merrimack, NH, United States of America

Bernard J Schmanski