Centre National De La Recherche Scientifique

Ecole Polytechnique

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

Jobin Yvon S.a.

Other

Commissariat a L'energie Atomique

Assistance Publique-hopitaux De Paris

Instruments S.a.

Horiba Jobin Yvon Sas

Institut Mutualiste Montsouris

Bernard Drevillon

Antonello De Martino

Razvigor Ossikovski

Jean-Christophe Rostaing

Pere Roca I Cabarrocas

Alfred Hofrichter

Eric Compain

Jean-Yves Parey

Enric Garcia-Caurel

Serge Palacin

Edouard Da Silva

Laurent Schwartz

Denis Cattelan

Muriel Firon

Ramdane Benferhat

Marc Chaigneau

Nicolas Bertrand

Akli Karar

Anna Fontcuberta I Morral

Dmitri Kouznetsov

Thibaut Heitz

Benferhat Ramdane

Pavel Bulkine

André Nazac

Adolfo C Biosca

Bernard Huynh

Morten Kildemo

Régis Vanderhaghen

A multimode local probe microscope having a resonator, a first electrode, and a second electrode, an excitation source adapted to generate mechanical resonance in the resonator, a metal tip fastened to the resonator, movement mechanism for imparting relative movement between the local probe and a sample and adapted to bring the end of the tip to within a distance Z lying in the range 0 to 100 nm, and detector for detecting at least one electrical signal representative of friction forces at the terminals of said electrodes. The metal tip is electrically connected to the output second electrode and the microscopy apparatus includes amplifier and filter for amplifying and filtering signals relating to the friction forces and to the tunnelling current in a single electronic circuit, and configured for regulating the distance Z between the end of the tip and the surface of the sample.

Microscope having a multimode local probe, tip-enhanced raman microscope, and method for controlling the distance between the local probe and the sample

A spectroscopic polarimetric system of broad spectral range, includes a light source suitable for emitting an incident light beam over a wavelength range, a polarization state generator (PSG), a polarization state analyzer (PSA), and a detector. The PSG and the PSA have respective elements for modulating the polarization of the light beam. The elements of the PSG for modulating polarization are suitable for generating a sequence ofpolarization states with m&#x3e;4 at each measurement wavelength, the elements of the PSA for modulating polarization are suitable for determining a sequence ofpolarization states with n&#x3e;4 for each measurement wavelength, and the detector elements are suitable for acquiring a sequence of N measurements with 16&#x3c;N&#x2266;n&#xd7;m at each wavelength to extract therefrom a polarimetric spectroscopic measurement of the Mueller matrix of the sample. An extended spectroscopic polarimetric measurement method is also described.

Device and method for taking spectroscopic polarimetric measurements in the visible and near-infrared ranges

An electronic polarimetric imaging system for a colposcopy device designed for in vivo observation of a cervix, wherein the colposcopy device includes a light source for illuminating the observable cervix and at least visual elements for monitoring an image of the cervix, the illumination optical path towards the cervix and the image optical path coming back from the cervix being separated from one another over at least one portion of the paths thereof. The system includes a polarimetric adapter housing which is removable into the separated portion of the illumination and image optical paths, the polarimetric adapter housing including a polarisation state generator (PSG) on the illumination optical path and a polarisation analyser (PSA) on the image optical path, wherein the polarisation state generator (PSG) and the polarisation analyser (PSA) are controllable. Several levels of polarimetric characterisation are possible. An adaptor housing is also disclosed.

Electronic polarimetric imaging system for a colposcopy device and an adapter housing

A transistor for active matrix display and a method for producing the transistor (). The transistor () includes a microcrystalline silicon film () and an insulator (). The crystalline fraction of the microcrystalline silicon film () is above 80%. According to the invention, the transistor () includes a plasma treated interface () located between the insulator () and the microcrystalline silicon film () so that the transistor () has a linear mobility equal or superior to 1.5 cm2V&#x2212;1s&#x2212;1, shows threshold voltage stability and wherein the microcrystalline silicon film () includes grains () whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.

Transistor for active matrix display and a method for producing said transistor

A Raman method and system for analysing a sample including an excitation source emitting an incident light beam, a sample holder for mounting the sample, elements for focusing the incident light beam onto the sample surface to generate a Raman scattered light having an intensity, elements for collecting the Raman scattered light to form a Raman scattered light beam, a detection system measuring intensity of the Raman scattered light beam as a function of time. The system includes at least a polarization state generator able to generate four independent polarization states or a polarization state analyzer able to analyze four independent polarization states to detect the intensity of the Raman scattered light beam and calculate a partial or complete Mueller-Stokes matrix of the sample.

Polarimetric Raman system and method for analysing a sample

Method and a polarimetric measurement device of a planar object carrying patterns repeated regularly and forming the lines of a grid. A first measurement is carried out at zero order, under an angle of incidence &#x3b8;and for a first azimuthal angle &#x3c6;, a second measurement at least is carried out at zero order, under an angle of incidence &#x3b8;and for a second azimuthal angle &#x3c6;, the polarization of the incident beam is modulated and the polarization of the reflected beam is analyzed for each measurement, theoretical polarimetric data is calculated for a model object of the real object, the model object including parameters adjustable using a formalism of electromagnetism. An iterative comparison of the measurements is conducted with the theoretical polarimetric data for different values of the adjustable parameters.

Metrological characterisation of microelectronic circuits

The invention concerns a photoactive nanocomposite () comprising at least one donor-acceptor couple of semiconductor elements. One of the elements is made of doped nanowires () with sp3 structure, and the other of the elements is an organic compound (). The elements are supported by a device substrate (). The invention also concerns a production method. According to a first embodiment, after their growth, the nanowires () are retrieved, functionalised and solubilised in the organic component (). The mixture is deposited by coating on a device substrate. According to a second embodiment, the nanowires () are formed on a growth substrate () which is also the device substrate. The organic component () is combined with the nanowires () so as to form an active layer (). Such a photoactive nanocomposite () allows production of a photovoltaic cell.

Photoactive nanocomposite and method for the production thereof

A broadband ellipsometer/polarimeter system for analyzing a sample includes an illumination source emitting a polychromatic light beam, a polarization state generator (PSG) including a fixed linear polarizer and a substantially achromatic retarder mounted on a rotating holder, a sample holder, a polarization state analyser (PSA) including a fixed linear polarizer and a substantially achromatic retarder mounted on a rotating holder, a primary detection system measuring the intensities at each wavelength of the light beam transmitted through the PSA, optics to collimate the beam into the PSG and into the PSA and to focus the beam into the sample surface and the detector. The linear polarizer and achromatic retarder in the PSA are identical to those of the PSG but mounted in a reverse order.

Broadband ellipsometer / polarimeter system

A liquid crystal based polarimetric system, a process for the calibration of this polarimetric system, and a polarimetric measurement process intended for measuring the representative parameters of a sample in which the polarimetric system contains an excitation section emitting a light beam that passes through a polarization state generator (PSG) and onto a sample. After reflection or transmission by the sample, the beam goes through an analysis section with a polarization state detector (PSD). The PSG and PSD each have a first and a second liquid crystal elements LC(j=1,2) having, for each LCelement of the PSG (respectively for each LCelement of the PSD), an extraordinary axis making an angle &#x3b8;(resp. &#x3b8;') with respect to the polarization direction (i), and a retardation &#x3b4;(resp (&#x3b4;&#x2032;) between its ordinary and extraordinary axes, the liquid crystals LCelements being positioned in reverse order in the PSD with respect to the LCelements of the PSG.

Liquid crystal based polarimetric system, a process for the calibration of this polarimetric system, and a polarimetric measurement process

A method for characterizing or controlling the production of a thin-layered component using optical methods. Acquired signals Sand Sare processed in order to obtain parameters x, &#x2208; of the deposited layers. The stacking is represented by the product of two Abeles matrices for each direction of polarization s (perpendicular to the incidence plane) and p (parallel to the incidence plane): a known matrix Morepresenting the support and matrix dMrepresenting a thin transparent layer being deposited. The signal variations measured, dSand dS, are inverted to obtain thickness x and dielectric constant &#x2208; of the thin layer by the following operations: Taylor expansion as a function of variation dx of thickness x of the thin layer of the coefficients of matrix dM; the coefficients of matrix Mare calculated each in the form A(&#x2208;)dx+B(&#x2208;)dx+C and the relation S=A(&#x2208;) dx+B(&#x2208;) dx+Cis thereby deduced which connects signals Sand Sto parameters &#x2208; and dx; dx is eliminated and a master function P(&#x2208;)=0 is thereby deduced; the equation is solved and the solutions are selected corresponding to values that are physically plausible in order to measure &#x2208; and use the &#x2208; value obtained to determine dx.

Method for characterizing or controlling the production of a thin-layered component using optical methods

A method for controlling the production of an object controlled by a gas panel, by performing an ellipsometric measurement on the object represented by its Mueller matrix; controlling, with a gas panel, the manufacture on the basis of the ellipsometric measurement. Certain parameters of the Mueller matrix are determined in advance, for characterizing the manufacture, and only these parameters are extracted from the ellipsometric measurement during manufacture, the parameters being two different parameters of the ellipsometric angles &#x3c8; and &#x394; and trigonometric functions thereof.

Ellipsometric method and control device for making a thin-layered component

Method for real-time control of the fabrication of a thin-film structure comprising a substrate by ellipsometric measurement in which:

Method for real-time control of the fabrication of a thin-film structure by ellipsometric measurement

The invention concerns an apparatus for optically characterising a thin-layer material by backscattering Raman spectometry comprising a frame, a monochromatic excitation laser source ( ), optical means ( ) directing a light flux emitted by the source towards the material to be characterised, provided with means ( ) homogenising the distribution of energy per surface unit, over a minimum surface of some tens of square micrometers, and means for collecting ( ) and selecting ( ) the light diffused by Raman effect. The apparatus further comprises reflectometric measuring means ( ) integral with the Raman measuring means, including reflectometric excitation means ( ) directed on the same sample zone as the Raman excitation means.

Apparatus for optically characterising thin layered material

The invention concerns a method for treating a surface for the protection and functionalisation of polymers ( ) by gas plasma deposit in a confined chamber ( ) of one or several silicon alloy layers ( ). The silicon alloy is selected among silicon and its oxides, nitrides, oxynitrides; the deposit is performed at a temperature less than the degradation temperature of the polymer, and a physico&mdash;chemical surface pre-treatment by plasma is performed in the same chamber before the silicon alloy is deposited; the pre-treatment consisting in a surface treatment comprising etching a surface zone of the polymer and step which consists in depositing a polymeric carbon compound.

Method for treating polymer surface

In this method for the surface treatment of a metal part ( ) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber ( ), in which the part to be treated is placed, is filled with a low-pressure reducing gas mixture, a static magnetic field is created in a region of the chamber ( ) separate from the region in which the part ( ) to be treated is placed and the gas mixture is excited by means of an electromagnetic wave injected into the chamber ( ) so as to generate a treatment plasma in the gas, the intensity of the static magnetic field corresponding to electron cyclotron resonance established in the chamber in a distributed manner.

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Clamart, France

Bernard Drevillon