Centre National De La Recherche Scientifique

Universitéde Strasbourg

University of Nebraska

Other

The Provost, Fellows, Foundation Scholars, and the Other Members of Board, of the College of the Holy and Undivided Trinity of Queen Elizabeth College Green

The Provost, Fellows, Foundation Scholard, and the Other Members of Board, of the College of the Holy & Undiv. Trinity of Queen Elizabeth Near Dublin

Bernard Doudin

Jean-François Dayen

Vina Faramarzi

Nicolas Giuseppone

Emilie Moulin

Frederic Niess

Peter A Dowben

Pierre Braunstein

John Michael David Coey

Thomas Marinus Hermans

Jean-François Letard

Sy-Hwang Liou

Guillaume Dalmas

Andrei Sokolov

Cheol-Soo Yang

Lu Yuan

Peter Dunne

Zhengzheng Zhang

Lucie Routaboul

Céline Etrillard

Jean-Francois Dayen

Thomas Hermans

Disclosed is a device including at least one circulating zone and at least one fluid including at least one more-paramagnetic liquid and at least one less-paramagnetic liquid forming a liquid-liquid interphase, the device including at least one element generating, in the circulating zone, a magnetic field, wherein the less-paramagnetic liquid is surrounded by the more-paramagnetic liquid in the circulating zone or wherein the more-paramagnetic liquid is surrounded by the less-paramagnetic liquid in the circulating zone. Also disclosed is a method including circulating at least one less-paramagnetic liquid inside one or more circulating zones of a device including at least one circulating zone and at least one more-paramagnetic liquid in the circulating zone.

Device and method for circulating liquids

A method is provided for modifying a surface of a solid conducting material, which includes applying a potential difference between this surface and a surface of another conducting solid material positioned facing it, and wherein, simultaneously, the surface (S) is put into contact with a liquid medium comprising in solution triarylamines (I): while subjecting these triarylamines (I) to electromagnetic radiation, at least partly converting them at into triarylammonium radicals. Also provided is a conducting device which includes two conducting metal materials, the surfaces of which, (S) and (S') respectively, are electrically interconnected through an organic material comprising conducting fibrillar organic supramolecular species comprising an association of triarylamines of formula (I).

Electric conduction through supramolecular assemblies of triarylamines

An electrical device in provided having two electrodes separated from one another, wherein one temperature controlled electronic spin-state transition particle is in direct contact with each of the two electrodes, the particle being of the ionic type and containing a transition metal bearing a cationic charge.

Optimized arrangement of triazole particles

The invention relates to the use of zwitterionic molecules for forming a hole or electron transport layer. The preferred zwitterionic molecules of the invention are derivatives of p-benzoquinonemonoimines. The invention is useful in the field of electronic devices in particular.

Use of zwitterionic molecules for forming a hole or electron transport layer

The present invention provides systems and method utilizing magnetoelectric materials such as CrOto construct tunneling magnetoresistence and/or giant magnetoresistence structures for memory and/or logical circuitry. An applied voltage differential induces a magnetic moment in the magnetoelectric material, which in turn tunes an exchange field between it and one or more adjacent ferromagnetic layers. The resulting magnetoresistence of the device may be measured. Devices in accordance with the present invention may be utilized for MRAM read heads, memory storage cells and/or logical circuitry such as XOR or NXOR devices.

Magnetic spin valve with a magnetoelectric element

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO /Cr O /CrO sequence but typically have multiple CrO /Cr O /CrO sequences in series.

Application of high spin polarization materials in two terminal non-volatile bistable memory devices

Growing community of inventors

Strasbourg, France

Bernard Doudin