U.S. Philips Corporation

Bernard Dam

Gerrit J Van Der Kolk

Theunis S Baller

Maritza G Heijman

Frans W Saris

Roger De Reus

A device comprising semiconductor elements and conductor tracks of an oxidic superconductive material, electrically conductive connections being established between the semiconductor elements and the conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer consists of an amorphous alloy of two transition metals, which alloy has a crystallization temperature of at least 900 K. The amorphous alloy has the composition A.sub.x B.sub.1-x, wherein A is selected from Ti, Zr, Hf, Nb and Ta, wherein B is selected from Ir, Pd and Pt, and wherein x has a value from 0.4 to 0.8.

Device and method of manufacturing a device

In a method of manufacturing a device comprising a film of an oxide superconducting material which comprises an alkaline earth metal, another metal component, copper and oxygen. A superconductor precursor material comprising copper oxide, alkaline earth metal fluoride and another metal or metal oxide, is provided on a substrate in the form of a film. The film is covered with a diffusion barrier against water in accordance with a pattern which is complementary to a desired pattern of superconducting material. Subsequently, the superconducting material is formed in the uncovered portions of the pattern by means of a treatment at an increased temperature in the presence of water and oxygen.

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Eindhoven, Netherlands

Bernard Dam