Alsthom-atlantique

Bernard Bourdon

Gaston Sifre

The invention provides a method of depositing a thin layer of material by decomposing a gas in a plasma. To avoid saturating the rate of depositing doped silicon, the substrate onto which the doped silicon is to be deposited has an RF bias applied thereto with respect to the plasma. The improvement resides in circulating in the chamber a gaseous medium at a pressure between 10.sup.-2 and 10.sup.-4 torr in the vicinity of the substrate by jetting the gaseous medium into the chamber, via a tube in which the pressure is maintained between 0.2 and 4 torr, through injection ports which face the substrate. The method is useful in the manufacture of semiconductor components.

Method for depositing thin layers of materials by decomposing a gas to

The invention relates to a method of manufacturing power semiconductors with pressed contacts and with an interdigitated structure. The thickest contact metal coverings are formed by application of a metal layer by serigraphy on a first thin metal layer deposited by evaporation in a vacuum.

Method of manufacturing power semiconductors with pressed contacts

In the manufacture of electronic components, a thin film is attacked by decomposition of a gas in a plasma. The thin film is mounted on a substrate which is RF biased with respect to the plasma thereby attracting fluorine ions for example which carry out the attack. This speeds the rate of attack and improves the definition of attacked portions of the substrate.

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Orsay, France

Bernard Bourdon