Commissariat a L'energie Atomique

Bernard Baylac

Gerard Merckel

Robert Poujois

Luc Audaire

Pierre Meunier

Jacques Ripert

A reference voltage generator comprising two MOS-type transistors T.sub.1 ' and T.sub.2 ' produced on the same substrate, the channels of these transistors having the respective lengths L.sub.1 and L.sub.2 and the respective widths Z.sub.1 and Z.sub.2, one of the transistors T.sub.2 ' having a channel, only one dimension of which is of the same order of magnitude as the corresponding dimension of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and this drain when the transistor is operating, the other dimension being large in relation to the corresponding dimension of said extension of the space charge zone, the other transistor T.sub.1 ' having a channel the two dimensions of which are large in relation to the corresponding dimensions of the extension, relative to the source and drain of this transistor, of the space charge zone appearing round this source and drain when the transistor is operating, and further comprising means for providing the difference in the threshold voltages of the transistors T.sub.1 ' and T.sub.2 ', this difference in threshold voltages representing the reference voltage.

Reference voltage generator

The amplitude of an electrical signal is converted into a current of proportional intensity which is integrated and an integration voltage appears at the terminals of the integrating circuit. There is produced a signal which initiates stopping of the current integration and a signal which initiates the start of a following integration at the instant when the integration voltage attains a threshold value V.sub.O. Stopping of the integration occurs after a time-delay .theta., when the integration voltage has overstepped the threshold value V.sub.O and attained a maximum value V'.sub.O. The threshold value V.sub.O is adjusted so as to control the maximum value V'.sub.O in dependence on a reference voltage V'.sub.O which is higher than V.sub.O. The frequency of integrations is measured, with the result that the conversion frequency is thus determined.

Method of amplitude-frequency conversion and a converter which operates

A negative-feedback band-pass amplifier constructed in accordance with the MOS technology comprises an input stage of the summing amplifier type constituted by two MOS transistors having sources connected to each other and to ground and drains connected to each other. The gate of one transistor constitutes the amplifier input and the gate of the other transistor is connected to the amplifier output through the negative feedback resistance. An amplifying chain whose input is coupled with the common drain connection of the input stage and whose output constitutes the amplifier output comprises n identical stages in series. Each stage is of the inverting amplifier type constituted by an MOS transistor mounted with a common source connected to ground and an MOS transistor mounted as a load resistance.

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Sassenage, France

Bernard Baylac