Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics S.a.

Aledia

Bernard Andre

Guillaume Bouche

Jean Dijon

Hubert Bono

Bérangère Hyot

Adrien Gasse

Nicolas Sillon

Pierre Desre

Brigitte Rafin

Xavier Hugon

Patrick Chaton

Ludovic Poupinet

Agnès Arnaud

Xavier Biquard

An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Optoelectronic device with light-emitting diodes and an improved radiation pattern

The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes () on a silicon layer () of an SOI wafer (), said layer resting on a carrier (); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap () equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (); and e) at least partially removing the carrier of the SOI wafer () and producing connecting and heat-sinking metallizations.

Process for forming light-emitting diodes

The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiOdielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

Super-resolution optical recording medium

A process for packaging a plurality of micro-components made on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a cover plate; depositing a metal layer on a face of the cover plate or on a face of the wafer; covering the wafer with the cover plate; applying a contact pressure equal to at least one bar onto the cover plate and onto the wafer; and heating the metal layer during pressing until a seal is obtained, each cavity thus being provided with a sealing area and being closed by a part of the cover plate and/or its metal layer.

Micro-component packaging process and set of micro-components resulting from this process

The invention relates to the field of optical information recording. In order to prevent abusive or fraudulent use of storage media, the invention provides a process for intentional degradation of information by application of a laser power below the normal power for reading information recorded in super-resolution on the media. This process relies on the surprising observation that a laser power below the super-resolution read power produces an irreversible degradation of the information recorded. This observation has been made with regard to media composed of a three-layer structure comprising an InSb or GaSb layer between two ZnS/SiOlayers. Application for protecting sensitive data.

Process for intentional deterioration of the contents of an optical recording medium

A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.

Process for packaging micro-components using a matrix

This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.

Method for low-temperature sealing of a cavity under vacuum or under controlled atmosphere

A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm. The layer is formed by depositing on a substrate without energy input to the substrate.

Growing community of inventors

Quaix en Chartreuse, France

Bernard Andre