USA As Represented by Secretary of the Navy

Berend T Jonker

Connie H Li

Olaf M J Van 't Erve

Jeremy T Robinson

Kathleen M Mccreary

Adam L Friedman

Olaf M J Van't Erve

Glenn Jernigan

Ying Liu

Lian Li

Enrique Cobas

Gary A Prinz

Keith E Whitener

Ramasis Goswami

Aubrey T Hanbicki

Shu-Fan Cheng

James J Krebs

Olaf M T Van 't Erve

Carl S Hellberg

F Keith Perkins

Paul M Campbell

Joshua R Hendrickson

Richard Magno

Matthew R Rosenberger

Hsun-Jen Chuang

Chandriker Kavir Dass

Zachariah B Hennighausen

A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on BiSe/WSat room temperature, comprising the steps of applying a laser to the BiSe/WS, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing BiSe/WSas a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the BiSe/WSheterostructure at room temperature.

Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature

Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.

Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

Light-emitting devices having lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.

Two-dimensional materials integrated with multiferroic layers

A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.

Nano-indent process for creating single photon emitters in a two-dimensional materials platform

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers

A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of BiSeand a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.

Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators

A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.

Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering

A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Solid phase epitaxy of 3C-SiC on Si(001)

The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.

Optical modulator using the spin hall effect in metals

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers

A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.

Method of making a magnetic field sensor

A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material&#x2014;graphene.

Growing community of inventors

Waldorf, MD, United States of America

Berend T Jonker