Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Aledia

Commissariat a L'energie Atomique

Mpo International

Commissariat a L'energie Atomique Et Aux Energies

Bérangère Hyot

Benoît Amstatt

Florian Dupont

Ludovic Poupinet

Marie-Françoise Armand

Philippe Gilet

Marie-Francoise Armand

Pierre Desre

Hubert Bono

Bernard Andre

Ewen Henaff

Serge Gidon

Xavier Hugon

David Vaufrey

Marc Plissonnier

Amélie Dussaigne

Patrick Chaton

Denis Pelenc

Pierre Imperinetti

Jerome Hazart

Stéphane Getin

Vincent Beix

Alain Fargeix

Claire Vialle

Thomas Lacave

Bruno-Jules Daudin

Salim Mimouni

Jérôme Hazart

Fabien Laulagnet

Delphine Neel

Armelle Even

Timotee Journot

Xavier Biquard

The invention relates to a method for manufacturing a layer of interest (3) in a III-N crystalline compound by epitaxy from a layer of graphene (2), characterized in that it comprises, prior to a phase of nucleation of the layer of interest (3), a step of thermal treatment of the layer of graphene (2) in which it is subjected to a first temperature (T) no lower than 1050&#xb0; C. and to a stream of ammonia.

Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from graphene

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

Optoelectronic device comprising three-dimensional diodes

A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.

Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements

The method for growing an elongate element (), notably a wire of nanowire or microwire type, includes forming a nucleation surface () having at least one germination site adopting the form of a germination hollow () and delimited at least partly by a mask (), the at least one germination hollow () being situated at a distance from the mask (), performing nucleation of a seed () intended to participate in the growth of the elongate element () on the at least one germination hollow (), and growing the elongate element () from the seed ().

Method for growing parallel elongate elements (nanowires, microwires) from a substrate comprising, for each elongate element, a seed formed in a cavity of a nucleation layer or a nucleation pad

The process for growing at least one semiconductor nanowire (), said growth process comprising a step of forming, on a substrate (), a nucleation layer () for the growth of the nanowire () and a step of growth of the nanowire (). The step of formation of the nucleation layer () comprises the following steps: deposition onto the substrate () of a layer of a transition metal () chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part () of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire ().

Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps

The electronic device comprises a substrate (), at least one semiconductor wire element () formed by a nitride of a group III material and an electroconductive layer () interposed between the substrate () and said at least one semiconductor wire element (). Said at least one semiconductor wire element () extends from said electroconductive layer (), and the electroconductive layer () comprises a carbide of zirconium or a carbide of hafnium.

Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide

The invention concerns an optoelectronic device () comprising: a substrate (); a first layer () covering the substrate, the first layer having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength between 380 and 650 nm; a second layer () covering and in contact with the first layer, the second layer having a thickness less than or equal to 20 nm and comprising a second material having a refraction index of between 1 and 3 and an extinction coefficient less than or equal to 1.5 or any wavelength between 380 and 650 nm; and conical or frustoconical wire semiconductor elements () each having a light-emitting diode stack (DEL), being in contact with the second layer.

Optoelectronic device with improved reflectivity

The electronic device comprises a substrate (), at least one semiconductor nanowire () and a buffer layer () interposed between the substrate () and said nanowire (). The buffer layer () is at least partly formed by a transition metal nitride layer () from which extends the nanowire (), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device

The optoelectronic device () comprises a substrate (), a light-emitting member () comprising an elongate element () extending in a direction forming an angle with the substrate (). An intermediate element () is interposed between the substrate () and a longitudinal end of the elongate element () closest to the substrate (). Furthermore, the substrate () is transparent to said light and the intermediate element (), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

Optoelectronic device with improved light extraction efficiency

A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.

Optoelectric device and method for manufacturing the same

The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300&#xb0; C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Sensitive material for bolometric detection

The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the reflectivity of the sensitive layer containing the information. The reflectivity of the optical disc is measured for several power levels of the read laser, a critical power is determined on the basis of the reflectivity measurements made, and a read power sufficiently above the critical power, so as to be well outside a range of power levels entailing risks, is selected according to the critical power.

Super-resolution optical disc reader and read method optimized through reflectivity measurement

A data storage device including a stack of layers is provided. The stack of layers includes at least one memory layer able to effect a storage of data in a plurality of portions of the memory layer by a modification of at least one physico-chemical property of the material of the portions of the memory layer under the effect of an electric current passing through the portions of the memory layer. A plurality of photoconductive columns disposed in the stack of layers passes through each layer in this stack. Each of the portions of the memory layer surrounds one of the photoconductive columns.

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Eybens, France

Bérangère Hyot