Hynix Semiconductor Inc.

Beom Yong Kim

Ki Hong Lee

Kwon Hong

Kee Jeung Lee

A non-volatile memory device includes a plurality of memory cells stacked along a channel protruded from a substrate, a first select transistor connected to one end of the plurality of memory cells, a first interlayer dielectric layer for being coupled between a source line and the first select transistor, and a second interlayer dielectric layer disposed between the first select transistor and the one end of the plurality of memory cells, and configured to include a first recess region.

Growing community of inventors

Gyeonggi-do, South Korea

Beom Yong Kim