Samsung Electronics Co., Ltd.

Sogang University Research Business Development Foundation

Beom Suk Lee

Chang Hwa Kim

Tae Yon Lee

Sang Su Park

Jung Hun Kim

Dong Mo Im

Gwi-Deok Ryan Lee

Sang Hoon Uhm

Changhwa Kim

Junghun Kim

Kwan Sik Kim

Sangsu Park

Kyungrae Byun

Man Geun Cho

Sejung Park

Jae Ho Kim

Kwang-Min Lee

Masaru Ishii

Sang-Su Park

Gang Zhang

Jong Eun Park

Jae Kyu Lee

Gwideok Ryan Lee

Min Jun Choi

Hong Ki Kim

Gwi Deok Ryan Lee

Sang Chun Park

Kwan Sik Cho

Jae Sung Hur

Kazunori Kakehi

Ju Wook Jang

Ja Meyung Kim

Jae Geun Song

Jin Hyung Kim

An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.

Image sensor and method for fabricating the same

In a hyper ledger-based blockchain network system, in order to adjust latency and throughput required by a specific hyper ledger-based network, by using a block size, an endorsement policy, the number of channels, and the number of vCPUs allocation, the latency and the throughput desired by a user are maintained.

Method for enhancing throughput in blockchain network

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

Image sensor and method of fabricating thereof

An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

Image sensor

An image sensor includes a substrate having a photoelectric conversion element therein, a first insulating layer on the substrate, a contact penetrating through the first insulating layer, a color filter on at least one side of the contact, and a moisture absorption prevention layer in contact with a sidewall of the contact and extending on an upper surface of the color filter.

An image sensor includes a substrate having a photoelectric conversion element therein, a first via extending into a first surface of the substrate such that a first upper surface of the first via is exposed adjacent the first surface of the substrate, a second upper surface of the first via extending away from the first surface of the substrate, first to third insulating films sequentially stacked on the first surface of the substrate, and a contact extending through the first to third insulating films and into the second upper surface of the first via. The contact includes a first portion within the first via, a second portion in the first insulating film, a third portion in the second insulating film, and a fourth portion in the third insulating film.

An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.

Image sensors having separation structures

An image sensing device includes a photoelectric device disposed within a semiconductor substrate, and a separation structure and electrode structures disposed within the semiconductor substrate, and surrounding the photoelectric device. The separation structure includes a first conductive pattern, and a first insulating spacer between the first conductive pattern and the semiconductor substrate. A respective one of the electrode structures includes a second conductive pattern, and a second insulating spacer between the second conductive pattern and the semiconductor substrate. The first conductive pattern and the second conductive pattern are formed of the same conductive material.

Image sensing device

Image sensors according to some embodiments of the inventive concepts may include a pixel array are including a plurality of pixels, a peripheral area adjacent the pixel array unit, and an organic photoelectric converting layer including a first portion positioned on the pixel area and a second portion positioned on the peripheral area. The second portion may be separated from the first portion.

Image sensors and methods for manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Beom Suk Lee