Applied Materials, Inc.

Beom Soo Park

Soo Young Choi

John M White

Robin L Tiner

Tae Kyung Won

Qunhua Wang

Gaku Furuta

Dong-Kil Yim

Suhail Anwar

Shinichi Kurita

Yi Cui

Young Jin Choi

Quanyuan Shang

Sam Hyungsam Kim

James Hoffman

Li Hou

Hong Soon Kim

Ki Woon Kim

Seon-Mee Cho

Dong Kil Yim

Chung-Hee Park

Han Byoul Kim

Kam S Law

Carl A Sorensen

Jrjyan Jerry Chen

Jozef Kudela

Lai Zhao

Sanjay D Yadav

Jonghoon Baek

Ernst Keller

William Norman Sterling

Jriyan Jerry Chen

Michael Starr

Omori Kenji

Jin Man Ha

Dongsuh Lee

Jiri Kucera

Bora Oh

Dan Maydan

Wendell T Blonigan

William Reid Harshbarger

Dapeng Wang

Helinda Nominanda

Robert I Greene

Young-jin Choi

Ya-Tang Yang

Young-Jin Choi

Yixuan Wu

Weijie Wang

Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

Plasma treatment on metal-oxide TFT

The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.

Gas confiner assembly for eliminating shadow frame

The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Corner spoiler for improving profile uniformity

Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

Flip edge shadow frame

The present disclosure generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. A substrate support may have a substrate support body having a surface roughness of between about 707 micro-inches and about 834 micro-inches. The substrate support may have an anodized coating on the substrate support.

Roughened substrate support

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

Plasma uniformity control by gas diffuser hole design

Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

The present invention generally relates to a substrate support for use in a processing chamber. The substrate support has a rectangular body. The rectangular body has a first quadrant, a second quadrant, a third quadrant and a fourth quadrant. A first heating element is disposed in the first quadrant and extending from a center area of the rectangular body. The first heating element has a first segment having a first length and extending from the center area, a second segment having a second length, the second segment extending from the first segment and coupled thereto, a third segment having a third length extending from the second segment and coupled thereto, and a fourth segment having a fourth length coupled to and extending from the third segment to the center area. A second heating element is enclosed by the first heating element and the center area.

Substrate support with quadrants

The present disclosure generally relates to capacitors having a multilayer dielectric material between two electrodes. The multilayer dielectric material can have a small thickness with little to no breakdown strength reduction. By utilizing a multilayer dielectric structure in a capacitor, not only can the breakdown strength remain at an acceptable level, but the collective thickness of the capacitor may be reduced to accommodate the higher density pixels for display devices or any device that utilizes a capacitor.

Low temperature multilayer dielectric film for passivation and capacitor

Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

Anodized showerhead

The present invention generally relates to a substrate support for use in a processing chamber. The substrate support is divided into quadrants with each quadrant capable of heating independent of the other quadrants. The independent heating permits the substrate support to provide different heating to either different substrate simultaneously disposed on the substrate support or to different areas of a common substrate. Thus, the substrate heating may be tailored to ensure desired processing of the substrate or substrates occurs.

The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.

Interface adhesion improvement method

Gas diffuser assembly

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San Jose, CA, United States of America

Beom Soo Park