Skhynix Inc.

Beom Seok Lee

Hwan Jun Zang

Tae Yong Lee

Woo Tae Lee

Sang Hyun Ban

Myoung Sub Kim

Seung Yun Lee

Ji Sun Han

Byung Jick Cho

Hye Jung Choi

Jong Ho Lee

Young Ho Lee

Won Jun Lee

Jun Ku Ahn

Sung Lae Cho

Seok Man Hong

Uk Hwang

Gwang Sun Jung

Ye Cheon Cho

A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Electronic device and method for manufacturing electronic device

A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Semiconductor device

A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Chalcogenide material, variable resistance memory device and electronic device

An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.

Electronic device and method of operating memory cell in the electronic device

An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.

A method of manufacturing an electronic device including a semiconductor memory may include forming a first active layer, forming a first electrode material over the first active layer, performing a heat treatment process on the first electrode material and the first active layer, and forming a second electrode material over the heat-treated first electrode material.

Electronic device and method of manufacturing electronic device

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Icheon, South Korea

Beom Seok Lee