Hynix Semiconductor Inc.

Beom-Seok Hah

Jung-Hwan Lee

Ji-Hwan Kim

Myung Hoon Cho

Seong-Je Park

A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

Memory device and method for operating the same

A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

Growing community of inventors

Gyeonggi-do, South Korea

Beom-Seok Hah