Samsung Electronics Co., Ltd.

Beom Seo Kim

Jamin Koo

Jonghyeok Kim

A semiconductor memory device including an active pattern defined by a device isolation pattern, a bit line extending in a first direction on the device isolation pattern and the active pattern, a bit line capping pattern including a first capping pattern, a second capping pattern, and a third capping pattern sequentially stacked on an upper surface of the bit line, and a shield pattern covering one side of the bit line may be provided. An upper surface of the shield pattern may be at a height lower than an upper surface of the first capping pattern.

Growing community of inventors

Suwon-si, South Korea

Beom Seo Kim