Samsung Electronics Co., Ltd.

Beom-Rak Choi

Joon-Hoo Choi

Chong-Chul Chai

Jin-Koo Chung

Jong-Moo Huh

In-Su Joo

Sang-Gab Kim

Jean-Ho Song

Myung-Koo Kang

Hee-Hwan Choe

Sook-Young Kang

An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.

Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device

There are provided an organic EL device and a method of fabricating the same. An effective display area on which an anode electrode, an organic luminescence layer and a cathode electrode are formed is sealed by means of a metal can, a glass cap or an organic/inorganic material. A power source is applied to the anode and the cathode electrodes through a power transferring part extended from the effective display area to a non-effective display area. Accordingly, it is possible to reduce the oxidation of the cathode electrode of the organic EL device, thereby preventing the electrical contact characteristics of the cathode electrode from being deteriorated.

Organic electroluminescence device and method for fabricating thereof

Disclosed are an active matrix type organic electroluminescent display device and a manufacturing method thereof. At least two capacitors having different functions from each other are disposed in a vertically stacked structure within a unit pixel region. When a compensation circuit needing two or more capacitors having different functions from each other per pixel is applied, the two or more capacitors are vertically stacked, thereby preventing the aperture ratio from being lowered due to the increase in the number of capacitors within the pixel.

Active matrix type organic electroluminescent display device and method of manufacturing the same

Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film of low dielectric constant having an opening exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer and a second electrode are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film of low dielectric constant, the surface treatment of the pixel electrode can be performed using O2 plasma enhance luminance properties.

Organic electroluminescent device

An organic light emitting display is provided, which includes: a first electrode formed on a substrate; a partition having an opening exposing the first electrode at least in part; an auxiliary electrode formed on the partition and having substantially the same planar shape as the partition; an organic light emitting member formed on the first electrode and disposed substantially in the opening; and a second electrode formed on the light emitting member and the auxiliary electrode.

Organic light emitting display having auxiliary common electrode

A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl, SFand Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into the semiconductor layer and a source electrode and drain electrode are formed to be electrically connected to the source region and drain region.

Method for manufacturing a thin film transistor using poly silicon

There are provided an organic El device and a method of fabricating the same. Each of anode electrodes includes an organic luminescence layer disposed thereon, and a cathode electrode separately disposed on each of the organic luminescence layers. Each cathode electrode receives a power source suitable for operation properties of each of the organic luminescence layers. Accordingly, an improved image may be displayed in a full-color display.

Growing community of inventors

Seoul, South Korea

Beom-Rak Choi