Samsung Electronics Co., Ltd.

Beom-jong Kim

Young-Jin Kim

Han-jin Lim

Jae-hyoung Choi

Seok-Woo Nam

Bong-hyun Kim

Kyoung-Ryul Yoon

Jae-young Park

Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition.

Methods of fabricating stack type capacitors of semiconductor devices

Growing community of inventors

Yongin-si, South Korea

Beom-jong Kim