Samsung Electronics Co., Ltd.

Beom Jin Yoo

Sang Ki Nam

Kyu Hee Han

Won Hyuk Jang

Min Hyoung Kim

Young Do Kim

Jeong Min Bang

Sang-Heon Lee

Vasily Pashkovskiy

Jehun Woo

Masahiko Tomita

Lu Siqing

Kwang-Youb Heo

A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

Cleaning solution production systems and methods, and plasma reaction tanks

A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

Plasma generator, cleaning liquid processing apparatus, semiconductor device cleaning apparatus, cleaning liquid processing method, and method of manufacturing semiconductor device

In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

Plasma processing apparatus and method, and method of manufacturing semiconductor device using the same

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Hwaseong-si, South Korea

Beom Jin Yoo