Skhynix Inc.

Beom-Ho Mun

Yun-Hyuck Ji

In-Sang Kim

A method for fabricating a semiconductor device includes forming a line structure including a first contact plug on a semiconductor substrate and a conductive line on the first contact plug, forming a low-k layer having a first low-k, which covers a top surface and side walls of the line structure, performing a converting process on the low-k layer to form a non-converting portion adjacent to side walls of the first contact plug and maintains the first low-k and a converting portion adjacent to side walls of the conductive line and having a second low-k that is lower than the first low-k, and forming a second contact plug which is adjacent to the first contact plug with the non-converting portion therebetween while being adjacent to the conductive line with the converting portion therebetween.

Semiconductor device having low-k spacer and converting spacer and method for fabricating the same

A semiconductor device includes a bit line structure including a bit line contact plug and a bit line on the bit line contact plug, a storage node contact plug, an ultra low-k spacer including a gap-fill spacer contacting a side wall of the bit line contact plug and a line-type spacer contacting a side wall of the bit line, and a low-k spacer formed on the line-type spacer of the ultra low-k spacer to contact the storage node contact plug, wherein the gap-fill spacer is thicker than the line-type spacer.

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Gyeonggi-do, South Korea

Beom-Ho Mun