Air Products and Chemicals, Inc.

Schlumberger Technology Corporation

Tokyo Electron Limited

Other

Dupont Air Products Nanomaterials, LLC

Bentley J Palmer

Rebecca A Sawayda

Xiaobo Shi

Roger Card

Philip F Sullivan

Joseph T Hillman

Diankui Fu

Dean M Willberg

Victoria Perez

Fadi Abdallah Coder

J Ernest Brown

Jesse Lee

Patrick W Bixenman

Kohei Kawamura

James Allen Schlueter

Glenn A Roberson, Jr

Matthew J Miller

William H Mullee

Glenn W Gale

Marc De Leeuwe

Akira Asano

Edgar Volpert

Gunilla Jacobson

Koutarou Miyatani

A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Method and composition for chemical mechanical planarization of a metal

A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.

Method and composition for chemical mechanical planarization of a metal or a metal alloy

A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 &#x212b; reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.

Polishing slurry for copper films

A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Method for chemical mechanical planarization of chalcogenide materials

A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.

Method for supercritical carbon dioxide processing of fluoro-carbon films

A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical COprocessing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical COprocessing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

System and method for processing a substrate using supercritical carbon dioxide processing

A method of post chemical mechanical polishing (CMP) cleaning to remove a CMP residue from a surface of an object is disclosed. The object is placed within a pressure chamber. The pressure chamber is pressurized. A supercritical carbon dioxide process is performed to remove a residual CMP residue from the surface of the object. The pressure chamber is vented.

Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process

A method for treating a wellbore (or well casing) and the contiguous wellbore area to remove scale (mineral deposits comprised of, e.g., BaSO4, CaCO3, etc.) in the context of hydrocarbon recovery and other applications is disclosed, said method including contacting the scale with a fluid comprised of an ionic liquid or liquids.

Scale removal

Non-aqueous base wellbore fluids characterized by enhanced electrical conductivity due to formulation with specified ionic liquids are disclosed. Drilling, completion, and workover methods utilizing the wellbore fluids are also disclosed.

Wellbore fluids and their application

The invention provides a method of fracturing, including the provision and use of a fracturing fluid suspension containing an effective amount of a solid particulate breaker material having delayed breaking or degradation characteristics, additionally including an amount of durable fibers and/or platelets sufficient to enhance wellbore solids, such as proppant, transport. In a preferred aspect, solid particulate matter, which comprises or is composed of a specified organic polymeric compound or composition having an average molecular weight of at least 10,000, or a mixture of such compounds or compositions, and which solid organic polymeric matter reacts or decomposes, as described, is combined in a fracturing fluid with or containing a specified gellant and proppant, to form a fracturing fluid suspension, and the suspension formed is pumped downwell and deposited as a gelled suspension in the subterranean formation, generally under fracturing conditions.

Fracturing process and composition

An improved method for transport of particulate matter in a wellbore fluid, and particularly the transport of particulate matter in subterranean wells, such as hydrocarbon wells, is disclosed, the method being characterized by utilization of specified fibers to aid in transport of the particulate matter. Additional embodiments include the removal of particulate matter (particles) and particle deposits, such as from drill cuttings, during the drilling of wells, and the removal of particulate matter deposits in cleanout operations.

Method to remove particulate matter from a wellbore using translocating fibers and/or platelets

An improved method for cleanout of subterranean wells, such as hydrocarbon wells, is disclosed, the method being characterized by utilization of specified translocating fibers and/or platelets to aid in reduction of undesired fluids in the wellbore.

Growing community of inventors

Phoenix, AZ, United States of America

Bentley J Palmer