S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat À L'energie Atomique (cea)

Benoît Bataillou

Bruno Ghyselen

Hubert Moriceau

Cécile Aulnette

A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.

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Grenoble, France

Benoît Bataillou