Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics S.a.

Benoit Sklenard

Perrine Batude

Shay Reboh

Frederic Mazen

Maud Vinet

Elisa Vianello

Jean-Michel Hartmann

Philippe Blaise

Marios Barlas

Method including the steps consisting in:

Method for doping source and drain regions of a transistor by means of selective amorphisation

Method for fabricating a transistor comprising the steps consisting of:

Method for forming doped areas under transistor spacers

Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps:

Method for manufacturing a transistor in which the strain applied to the channel is increased

A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.

Recrystallization of source and drain blocks from above

A method for manufacturing an integrated circuit, including the steps of forming first transistors on a first semiconductor layer; depositing a first insulating layer above the first semiconductor layer and the first transistors, and leveling the first insulating layer; depositing a conductive layer above the first insulating layer, and covering the conductive layer with a second insulating layer; bonding a semiconductor wafer to the second insulating layer; thinning the semiconductor wafer to obtain a second semiconductor layer; and forming second transistors on the second semiconductor layer.

Growing community of inventors

Grenoble, France

Benoit Sklenard