Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Stmicroelectronics (crolles 2) Sas

Thales

Alcatel Lucent

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Benoit Giffard

Yvon Cazaux

Xavier Hugon

Norbert Moussy

Francois Roy

Marie Guillon

Pierre Gidon

Philippe Bois

Jean-Luc Reverchon

Boris Rodrigues Goncalves

Boris Rodrigues

Andre-Jacques Auberton-Herve

A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

Time-of-flight detection pixel

The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem) electrically coupled to the detection zone by a first gate (); a second memory (mem) electrically coupled to the detection zone by a second gate (); and a third memory (mem) electrically coupled to the detection zone by a third gate (), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (Pto P) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.

Image sensor for capturing 2D image and depth

The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.

Visible and near-infrared radiation detector

This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.

Optical detector unit

The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.

Monolithic multispectral visible and infrared imager

The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.

A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.

Photo-detecting device and method of making a photo-detecting device

A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.

Linear image sensor in CMOS technology

An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.

TDI image sensor in CMOS technology with high video capture rate

Microelectronics structure comprising a low voltage part provided with protection against a high voltage part and method for obtaining said protection

Device for the protection of an electrical load. A branch (4) connects an input terminal (1) to an output terminal (2). The branch includes in series:

Device for the protection of an electrical load and power supply circuit

Method for producing a silicon technology transistor on a nonconductor. This method consists in particular of forming a thin film of silicon (6) on a nonconductor (4) and then a mask (8, 10) including one opening (13) at the location provided for the channel (26) of the transistor; of locally oxidizing (14) the unmasked silicon to form an oxidation film; of eliminating the mask; of forming source (18) and drain (20) regions in the silicon by ion implantation with the oxidation film being used to mask this implantation; of eliminating the oxidation film; and of forming a thin gate nonconductor between the source and the drain and then forming the gate.

Method for producing a silicon technology transistor on a nonconductor

A static memory cell of the metal-insulator-semiconductor type, which can be used in the microelectronics field for producing random access memories for storing binary information. This MIS type memory cell is a random access static memory cell known under the abbreviation SRAM. A bistable flip-flop is formed by a MIS transistor and a parasitic bipolar transistor. The source and drain of the MIS transistor respectively formed by constituting the emitter and collector of the bipolar transistor. The region of the channel of the MIS transistor located between the source and drain serves as the base for the bipolar transistor. The base is completely isolated from the outside of the memory cell. The gate electrode of the MIS transistor is electrically isolated from the region of the channel. There is an addressing circuit for the flip-flop for storing binary information in the form of the absence or presence of current.

Growing community of inventors

Grenoble, France

Benoit Giffard