Nexdot

Ecole Polytechnique

Fonds De L'espci-georges Charpak

The Rockefeller University

Benoit Dubertret

Sandrine Ithurria

Pascal Le Floch

Nicolas Mezailles

Emmanuel Lhullier

Xavier Le Goff

Vincent Noireaux

Albert Libchaber

An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing of the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.

Electronic device comprising nanogap electrodes and nanoparticle

A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material.

Process for manufacturing colloidal materials, colloidal materials and their uses

A colloidal material and a process for manufacturing it and uses of the colloidal material for manufacturing optic devices. The colloidal material is of formula AX, wherein A is an element selected from groups II, III or IV of the periodic table; X is a metal selected from groups V or VI; and in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and n and m are such that AXis a neutral compound. The colloidal compound may be CdS, InP, or PbS. The process includes a step of solution phase decomposition of a mixture of X and a carboxylate of formula A(R&#x2014;COO)in the presence of a non- or weakly-coordinating solvent, and injecting an acetate salt or acetic acid in the mixture; wherein p is an integer between 1 and 2; R is a linear or branched Calkyl group.

The subject of the invention is a method of synthesizing a compound MPwhere M is an element belonging to one of columns II to XV of the Periodic Table of the Elements or to the family of lanthanides or to the family of actinides, characterized in that it includes the reaction of x moles of compound comprising the element M in its oxidation state 0 with y/4n moles of compound (P). The method of the invention may be carried out at a temperature much lower than those necessary in the methods of the prior art. It also allows low-temperature formation of nanoparticles and stoichiometric reaction control. The applications of this method are numerous: magnetic ferro-magnets for MnP and FeP; hydrodesulfurization catalysts for NiP; luminescent nanoparticles for biological applications; microelectronics and optoelectronics for InP; and electronics for GaP. The latter two phosphides are also used in the photovoltaic energy field.

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Paris, France

Benoit Dubertret