Université De Nantes

Centre National De La Recherche Scientifique

Centre National De La Recherche Scientifique-Cnrs

Université Paris Sud Xi

Université Paris-Saclay

Benoit Corraze

Etienne Janod

Marie-Paule Besland

Laurent Cario

Laurent Carlo

Emeline Souchier

Julie Martial

George Christian Vaju

Pablo Stoliar

Julien Tranchant

Marcelo Rozenberg

Vincent Guiot

An artificial neuron includes a single-component electric dipole including a single material which belongs to the class of Mott insulators and is connected to first and second electric electrodes.

Single-component artificial neuron based on Mott insulators, network of artificial neurons and corresponding manufacturing method

A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.

Use of centrosymmetric Mott insulators in a resistive switched memory for storing data

The invention relates to a method for preparing a thin film of at least one compound of formula AMX, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AMXby the magnetron spraying of a target including at least one compound of said formula AMX, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.

Method for preparing a thin film of thiospinels

The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A includes at least one of the following elements: Ga, Ge, Zn; M includes at least one of the following elements: V, Nb, Ta, Mo; and X includes at least one of the following elements: S, Se.

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