Imec Vzw

Benoit Bakeroot

A III-V device and a method for forming the device is provided. The III-V FET device includes: a device layer stack including in a bottom-up direction: a drain layer of n-type GaN, a drift layer of n-type GaN, a channel layer of p-type GaN, and a source layer; a gate extending in a top-down direction into the device layer stack and through the channel layer; and a source contact in contact with the source layer and a drain contact in contact with the drain layer; wherein the source layer is formed by a heterostructure comprising in the bottom-up direction a buffer layer of unintentionally doped GaN and a barrier layer of AlGaN.

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Ghent, Belgium

Benoit Bakeroot