Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Benno Rösener

Joachim Wagner

Marcel Rattunde

Nicola Schulz

The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlGaAsSb, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlGaInAsSb, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

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Freiburg, Germany

Benno Rösener