Infineon Technologies Ag

Benno Muehlbacher

Andreas Wiesbauer

Richard Gaggl

Luca Valli

Jose Luis Ceballos

Christian Jenkner

Christian Ebner

Michael Reinhold

Francesco Polo

Stephan Mechnig

Pedro Augusto Borrego Lambin Torres Amaral

Georgi Nikolov Panov

Ernesto Romani

Juergen Roeber

Fulvio CiCiotti

Mohammed Hassan

Fulvio Ciciotti

A differential MEMS-readout circuit comprises a first input bonding pad, including a first contact pin and a second contact pin. The differential MEMS-readout circuit comprises a second input bonding pad, including a first contact pin and a second contact pin; and a differential-readout amplifier section comprising a first input connected to the first contact pin of the first input bonding pad and a second input connected to the first contact pin of the second bonding pad, wherein the differential-readout amplifier section comprises a first and a second transistor circuit and each of the second contact pins of the first and second input bonding pads is coupled to one of the first and the second transistor circuits or is coupled to one of the first and the second transistor circuits and/or to ground.

Differential MEMS-readout circuit and a method of using the same

A microphone includes a first resistor circuit for receiving a bias voltage; an offset reduction circuit coupled to the first resistor circuit; a second resistor circuit coupled to the offset reduction circuit; an amplifier coupled to the second resistor circuit configured for receiving an input signal and generating an output signal; and a capacitor circuit coupled to the amplifier, the offset reduction circuit, and the second resistor circuit.

Offset reduction for silicon microphones

In accordance with an embodiment, a circuit includes: a first super source follower; a compensation circuit having a compensating node configured to provide a voltage of opposite phase of a voltage of an internal node of the first super source follower; and a first compensation capacitor coupled between an input of the first super source follower and the compensating node of the compensation circuit.

Super source follower

In various embodiments, a method for operating a sensor is provided. The method includes intermittently generating an operating current in the sensor, generating a reactive current in the sensor when the operating current is not generated, and not generating the reactive current when the operating current is generated. A value of the reactive current is the same or approximately the same as a value of the operating current.

Method for operating a sensor, and sensor

In accordance with an embodiment, a method of performing a measurement with a capacitive sensor includes generating a periodic excitation signal that includes a series of pulses and smoothing edge transitions of the series of pulses to form a shaped periodic excitation signal that includes a flat region between the smoothed edge transitions. The method further includes providing the shaped periodic excitation signal to a first port of the capacitive sensor and measuring a signal provided by a second port of the capacitive sensor.

System and method for a capacitive sensor

A circuit for biasing a MEMS microphone includes a first group of serially-coupled transistors coupled between a first node and a second node, a second group of serially-coupled transistors coupled between the first node and the second node, and a voltage divider circuit coupled to the second node having a number of outputs, a first group of outputs being coupled to corresponding control nodes associated with the first group of serially-coupled transistors, and a second group of outputs different from the first group of outputs coupled to corresponding control nodes associated with the second group of serially-coupled transistors, the control nodes being either bulk nodes or gate nodes.

PVT compensated resistive biasing architecture for a capacitive sensor

According to an embodiment, a circuit includes a high-&#x3a9; resistor including a plurality of semiconductor junction devices coupled in series and a plurality of additional capacitances formed in parallel with the plurality of semiconductor junction devices. Each semiconductor junction device of the plurality of semiconductor junction devices includes a parasitic doped well capacitance configured to insert a parasitic zero in a noise transfer function of the high-&#x3a9; resistor. Each additional capacitance of the plurality of additional capacitances is configured to adjust a parasitic pole in the noise transfer function of the high-&#x3a9; resistor in order to compensate for the parasitic zero.

System and method for a high-ohmic resistor

A signal amplification method includes receiving, from a capacitive sensor, a first input signal by a first control terminal of a first transistor, and a second input signal by a first control terminal of a second transistor. The method also includes producing a first output signal, including amplifying a first signal at a first load path terminal of the first transistor using a first inverting amplifier having an output coupled to a resistance network, and producing a second output signal, including amplifying a second signal at a first load path terminal of the second transistor using a second inverting amplifier having an output coupled to the resistance network. The method also includes feeding back the first and second output signal to a second load path terminal of the first transistor and to a second load path terminal of the second transistor via the resistance network according to a pre-determined fraction.

System and method for signal amplification using a resistance network

In accordance with an embodiment, an interface circuit includes an amplifier configured to be coupled to a transducer, a first bypass circuit coupled to a first voltage reference and the amplifier, a second bypass circuit coupled to the first voltage reference and the amplifier, and a control circuit coupled to the second bypass circuit. The first bypass circuit conducts a current when an input signal amplitude greater than a first threshold is applied to the transducer and the control circuit causes the second bypass circuit to conduct a current for a first time period after the first bypass circuit conducts a current.

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St. Magdalen, Austria

Benno Muehlbacher