Agc Inc.

Agc Glass Europe

Quertech Ingenierie

Agc Glass Company North America

Asahi Glass Company, Limited

Agc Flat Glass North America, Inc.

Agc Vidros Do Brasil Ltda.

Benjamine Navet

Denis Busardo

Pierre Boulanger

Lionel Ventelon

Philippe Roquiny

Frederic Guernalec

Amory Jacques

Jacques Amory

A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a Nsource gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6&#xd7;10ions/cmand &#x2212;5.00&#xd7;10&#xd7;A/kV+2.00&#xd7;10ions/cm. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

Neutral color antireflective glass substrate and method for manufacturing the same

A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N, or O, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56&#xd7;10&#xd7;A/kV+4.78&#xd7;10ions/cmand &#x2212;2.22&#xd7;10&#xd7;A/kV+1.09&#xd7;10ions/cm, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

Antireflective glass substrate and method for manufacturing the same

The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 10ions/cmand 2.5&#xd7;10ions/cm.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.

Ion implantation process and ion implanted glass substrates

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Louvain-la-Neuve, Belgium

Benjamine Navet