Texas Instruments Corporation

Texas Instruments Incorporated Deutschland, Gmbh

Benjamin Stassen Cook

Juan Alejandro Herbsommer

Daniel Lee Revier

Archana Venugopal

Luigi Colombo

Swaminathan Sankaran

Nazila Dadvand

Adam Joseph Fruehling

Sreenivasan Kalyani Koduri

Barry Jon Male

Scott Robert Summerfelt

Baher S Haroun

Robert R Doering

Robert Alan Neidorff

Simon Joshua Jacobs

Steven Alfred Kummerl

Steve Kummerl

Mark William Morgan

Bradley Allen Kramer

Yong Lin

Kurt Peter Wachtler

Ralf Jakobskrueger Muenster

Bichoy Bahr

David Patrick Magee

Stephen John Fedigan

Matthew David Romig

Hassan Omar Ali

Paul Merle Emerson

Jo Bito

Abram M Castro

Brian Goodlin

Stuart M Jacobsen

Rongwei Zhang

Daniel Nelson Carothers

Genki Yano

Makoto Yoshino

Ayumu Kuroda

Karen Kirmse

Lutz Albrecht Naumann

Nathan Brooks

Peter Smeys

Roberto Giampiero Massolini

Django Trombley

Mahmud Halim Chowdhury

Sean Ping Chang

Dishit Paresh Parekh

Thomas Dyer Bonifield

Ricky A Jackson

Rajarshi Mukhopadhyay

Wei-Yan Shih

Ali Djabbari

Sreeram Subramanyam Nasum

Sadia Naseem

Daniel Yong Lin

James Francis Hallas

Randy Long

William David French

Yogesh Kumar Ramadass

Robert Allan Neidorff

Dok Won Lee

Vikas I Gupta

Mehmet Aslan

Paul L Brohlin

Ting-Ta Yen

Salvatore Frank Pavone

Keith Ryan Green

Phillip Nadeau

Dan Carothers

Sadia Arefin Khan

Jeronimo Segovia-fernandez

Athena Lin

S Josh Jacobs

Sanjay Mohan

Richard George Wallace

Yong Deng

Brian E Goodlin

Django Earl Trombley

A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

Semicondctor device package thermal conduit

In described examples, an integrated circuit comprises: a substrate; a semiconductor die on the substrate; and a device on the substrate and electrically coupled to the semiconductor die, the device including a polymer structure coated with a metal.

3D printed semiconductor package

In examples, a sensor package comprises a die pad and a semiconductor die on the die pad. The semiconductor die has an active surface. The sensor package includes a light sensor on the active surface of the semiconductor die. The sensor package includes a mold compound covering the die pad, the semiconductor die, and a portion of the active surface. The sensor package includes a light filter covering the light sensor and abutting the mold compound. The light filter includes a combination of silicone, metal particles, and an organic dye. The combination is configured to reject light having a wavelength in a target wavelength range. The light filter has a thickness of at least 0.5 millimeters.

Sensor packages with wavelength-specific light filters

In some examples, a package comprises a semiconductor die having a first surface and a second surface opposing the first surface, the semiconductor die including circuitry formed in the first surface. The package includes an acoustic waveguide in the semiconductor die, the acoustic waveguide including an array of capacitors. The array of capacitors includes a transducer portion and a diffraction grating portion. The transducer portion is configured to convert signals between electrical signals and acoustic waves, and the diffraction grating portion is configured to direct the acoustic waves toward and receive the acoustic waves from the second surface.

Acoustic waveguide with diffraction grating

Described examples include sensor apparatus and integrated circuits having a package structure with an internal cavity and an opening that connects of the cavity with an ambient condition of an exterior of the package structure, and an electronic sensor structure mechanically supported by wires in the cavity and including a sensing surface exposed to the cavity to sense the ambient condition of an exterior of the package structure.

Electronic sensors with sensor die in package structure cavity

A layer of additive material is formed in a circular printing area on a substrate using additive sources distributed across a printing zone. The additive sources form predetermined discrete amounts of the additive material. The substrate and the additive sources are rotated with respect to each other around a center of rotation, so that a pattern of the additive material is formed in a circular printing area on the substrate. Each additive source receives actuation waveforms at an actuation frequency that is proportional to a distance of the additive source from the center of rotation. The actuation waveforms include formation signals, with a maximum of one formation signal in each cycle of the actuation frequency. The formation signals result in the additive sources forming the predetermined discrete amounts of the additive material on the substrate.

Additive process for circular printing

A floating die package including a cavity formed through sublimation of a sacrificial die encapsulant and sublimation or separation of die attach materials after molding assembly. A pinhole vent in the molding structure is provided as a sublimation path to allow gases to escape, whereby the die or die stack is released from the substrate and suspended in the cavity by the bond wires only.

Floating die package

In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Through wafer trench isolation between transistors in an integrated circuit

A method of forming a composite material includes photo-initiating a polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice. Unpolymerized monomer is removed from the polymer microlattice. The polymer microlattice is coated with a metal. The metal-coated polymer microlattice is dispersed in a polymer matrix.

Filler particles for polymers

A packaged semiconductor device includes an IC die having bump features that are coupled to bond pads flip chip attached to a custom LF. The custom LF includes metal structures including metal leads on at least 2 sides, and printed metal providing a printed LF portion including printed metal traces that connect to and extend inward from at least one of the metal leads over the dielectric support material that are coupled to FC pads configured for receiving the bump features including at least some of the printed metal traces coupled to the bond pads on the IC die. The IC die is flip chip mounted on the printed LF portion so that the bump features are connected to the FC pads.

Custom leadframe from standard plus printed leadframe portion

A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

Stress isolation using three-dimensional trenches

A switch that includes a droplet capable of spreading between two conductors to allow them to be coupled when a voltage is applied. The droplet can be enclosed by a cap that is bonded to a wafer that the droplet is placed upon, and include metallic properties. The cap can create a cavity that may be filled by a fluid, gas, or vapor. The cavity can have multiple conductors that extend partially or fully through it. The droplet can couple the conductors when specific voltages, or frequencies are applied to them. At the specific voltage and frequency, the droplet can spread, allowing at least two conductors to be coupled.

Liquid metal MEMS switch

For surface wetting control, an apparatus can expel fluid from a droplet on a surface using a transducer mechanically coupled to the surface. A first area of the surface can have a first wettability for the fluid, and a second area of the surface can have a second wettability for the fluid. The first wettability of the first area of the surface can be greater than the second wettability of the second area of the surface. The first area and the second area can have a patterned arrangement.

Methods and apparatus for surface wetting control

An integrated circuit has a substrate that includes a semiconductor material, and an interconnect region disposed on the substrate. The integrated circuit includes a thermal routing trench in the substrate. The thermal routing trench includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal routing trench has a thermal conductivity higher than the semiconductor material contacting the thermal routing trench. The cohered nanoparticle film is formed by an additive process.

Thermal routing trench by additive processing

Disclosed embodiments include an integrated circuit (IC) comprising a silicon wafer, first and second conductive lines on the silicon wafer. There are first, second and third insulation blocks with portions on the first and second conductive lines and the silicon wafer, a metal pillar on the surface of the first conductive line opposite the silicon wafer, and a conductive adhesive block on the surface of the second conductive line opposite the silicon wafer. The IC also has a lead frame having first and second leads, and a capacitor having first and second capacitor terminals in which the first capacitor terminal is connected to the second lead using conductive adhesive, the second capacitor terminal is connected to the second conductive line through the conductive adhesive block, and the first lead is coupled to the first conductive line.

Process for thin film capacitor integration

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Addison, TX, United States of America

Benjamin Stassen Cook