Northrop Grumman Systems Corporation

General Electric Company

Benjamin Poust

Vincent Gambin

Dino Ferizovic

Stanton Earl Weaver

Michael Wojtowicz

Gary Dwayne Mandrusiak

Patty P Chang-Chien

Loan T Le

Rajinder S Sandhu

Alexis Zamora

Michael Conrad Battung

An apparatus for nano-imprinting using a high-pressure crystal phase transformation, includes: a stamp configured to perform nano-imprinting, the stamp comprising a pedestal and a base, wherein the pedestal is shaped to match an intended shape of a device to be fabricated; a tool chuck physically connected to the stamp, the tool chuck configured to allow a user to apply one or more of pressure and temperature to the film; a substrate upon which the device can be fabricated; a thin film physically connected to the substrate; and a tool stage physically connected to the substrate, the tool stage configured to allow a user to apply one or more of pressure and temperature to the film.

Nano-imprinting using high-pressure crystal phase transformations

An exemplary electronic assembly includes a planar semiconductor substrate having a front side with semiconductor components and a back side that includes one recess extending inwardly. One of an isolator and circulator is formed as part of the planar semiconductor substrate and includes one magnetic ferrite disk mounted within the one recess within the thickness of the planar semiconductor substrate. The one of an isolator and circulator has at least input and output ports. The input port is disposed to receive a radio frequency signal to be coupled with low insertion loss to the output port while providing high insertion loss to other radio frequency signals attempting to propagate from the output port to the input port.

Microelectronic RF substrate with an integral isolator/circulator

A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.

Low power threshold integrated micro-plasma limiter

A MMIC power amplifier circuit assembly comprised of a SiC substrate having a plurality of microchannels formed therein, where a diamond layer is provided within each of the microchannels. A plurality of GaN HEMT devices are provided on the substrate where each HEMT device is positioned directly opposite to a microchannel. A silicon manifold is coupled to the substrate and includes a plurality of micro-machined channels formed therein that include a jet impingement channel positioned directly adjacent each microchannel, a return channel directly positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.

Microfluidic impingement jet cooled embedded diamond GaN HEMT

A GaN high electron mobility transistor (HEMT) device having a silicon carbide substrate including a top surface and a bottom surface, where the substrate further includes a via formed through the bottom surface and into the substrate. The device includes a plurality of epitaxial layers provided on the top surface of the substrate, a plurality of device layers provided on the epitaxial layers, and a diamond layer provided within the via.

Growing community of inventors

Hawthorne, CA, United States of America

Benjamin Poust