Skyworks Solutions, Inc.

Skyworks Global Pte. Ltd.

Benjamin Paul Abbott

Rei Goto

Kwang Jae Shin

Jiansong Liu

Joshua James Caron

Alexandre Augusto Shirakawa

Hiroyuki Nakamura

Keiichi Maki

Gong Bin Tang

Chun Sing Lam

Benfeng Zhang

Stefan Bader

Jae Hyung Lee

Renfeng Jin

David Albert Feld

Michael David Hill

Yiliu Wang

Stephen Joseph Kovacic

Toru Jibu

Myung Hyun Park

Jong Duk Han

Myeong Gweon Gu

Yuhao Liu

William Abbott

Mats Erik Fredriksson

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Acoustic wave device with wurtzite based piezoelectric layer with high acoustic velocity

A first acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The first acoustic wave device can have a first shape and a first area. A second acoustic wave device can be coupled to the first acoustic wave device to at least partially cancel a second harmonic response of the first acoustic wave device. The second acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The second acoustic wave device can have a second shape that is different from the first shape and a second area that is within a threshold amount of the first area.

Acoustic wave filters with improved second harmonic response

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of more dense material disposed of a layer of less dense material.

Acoustic wave device with multi-layer interdigital transducer electrode having layer of more dense material over layer of less dense material

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Acoustic wave device with wurtzite based piezoelectric layer

A film bulk acoustic wave resonator comprising a piezoelectric film having a central region defining a main active domain in which a main acoustic wave is generated during operation, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on a lower surface of the piezoelectric film, a dielectric material layer disposed on a lower surface of the lower electrode, and lower recessed frame regions disposed laterally on opposite sides of the central region, the lower recessed frame regions defined by regions of one of the dielectric material or of the lower electrode having a lesser thickness than the thickness of the one of the dielectric material layer or of the lower electrode in the central region.

Raised and recessed frames on bottom and top plates of a BAW resonator

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

Acoustic wave filter with multiple acoustic wave devices on a subtrate

Methods related to gradient raised frames in film bulk acoustic resonators. According to certain aspects, a method for fabricating a film bulk acoustic resonator device can include: forming a first metal layer over a substrate; forming a piezoelectric layer; forming a second metal layer, the piezoelectric layer positioned between the first and second metal layers; and forming a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Methods related to gradient raised frames in film bulk acoustic resonators

An acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode disposed over the piezoelectric layer. The interdigital transducer electrode is thicker in a center region of the interdigital transducer electrode than in a gap region of the interdigital transducer electrode to thereby reduce a mass loading of the interdigital transducer electrode in the gap region. The interdigital transducer electrode has a layer of less dense material disposed of a layer of more dense material.

Acoustic wave device with multi-layer interdigital transducer electrode

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides.

Bulk acoustic wave device with multi-gradient raised frame

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure. The multi-gradient raised frame structure includes a first raised frame layer and a second raised frame layer. The second raised frame layer extends beyond the first raised frame layer. The second raised frame layer is tapered on opposing sides.

Multi-gradient raised frame in bulk acoustic wave device

A bulk acoustic resonator comprises a membrane including a piezoelectric film having multiple layers of piezoelectric material. At least one of the multiple layers of piezoelectric material has a different dopant concentration than another of the multiple layers of piezoelectric material.

Bulk acoustic wave resonator with stacked piezoelectric layers

Aspects of this disclosure relate to a bulk acoustic wave device with a multi-layer raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-layer raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-layer raised frame structure includes a first raised frame layer embedded in the piezoelectric layer and a second raised frame layer. The first raised frame layer has a lower acoustic impedance than the piezoelectric layer.

Bulk acoustic wave device with raised frame structure

A passive cathodic protection process for preservation of embedded metallic foundations entails embedding a wrap around a metallic foundation. The wrap has an outer sheath and an inner absorbent mat to be in direct contact with the metallic foundation. The is also mat hydrophobic. The wrap is subsumed such that an upper edge of the wrap is accessible. An oil-based metallic soap is injected via the upper edge to impregnate the mat. The metallic soap is selected from a set of metallic soaps such that the metal of the metallic soap is more electropositive than the metal of the metallic foundation such that the metallic soap acts as an anodic solution for galvanic exchange with metal within the embedded metallic foundation for the passive cathodic protection thereof. For example, zinc naphthenate may be selected for steel or aluminium foundations thereby allowing for both passive cathodic protection and biocidal action.

Embedded foundation protection system

Gradient raised frames in film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator device can include a substrate, first and second metal layers implemented over the substrate, a piezoelectric layer between the first and second metal layers, and a gradient raised frame implemented relative to one of the first and second metal layers and configured to improve reflection of lateral mode waves and to reduce conversion of main mode waves into lateral mode waves.

Gradient raised frames n film bulk acoustic resonators

A surface acoustic wave device is disclosed. The surface acoustic wave device can include a single crystal support layer, an intermediate single crystal layer positioned over the single crystal support layer, a lithium based piezoelectric layer positioned over the intermediate single crystal layer, and an interdigital transducer electrode positioned over the lithium based piezoelectric layer, the surface acoustic wave device configured to generate a surface acoustic wave. The single crystal layer can be a quartz layer, such as a z-propagation quartz layer. A thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the intermediate single crystal layer, and the thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the lithium based piezoelectric layer.

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Irvine, CA, United States of America

Benjamin Paul Abbott