Western Digital (fremont), Inc.

Read Rite Corporation

Agilent Technologies, Inc.

Wolfspeed, Inc.

Agilent Technlolgies, Inc.

Benjamin P Law

Ronald A Barr

Kenneth E Knapp

James Spallas

Matthew R Gibbons

Lien-Chang Wang

Ming Zhao

Jonathan Noah Simon

Alexander Komposch

Sung Chul Joo

Timothy Beerling

Kirk S Giboney

Ronald Shane Fazzio

Steven Rosenau

Marco F Aimi

Brian William Condie

Andrew Schmit

Jae Hyung Jeremiah Park

A semiconductor device package includes a substrate, a silicon (Si) or silicon carbide (SiC) semiconductor die, and a metal layer on a surface of the semiconductor die. The metal layer includes a bonding surface that is attached to a surface of the substrate by a die attach material. The bonding surface includes opposing edges that extend along a perimeter of the semiconductor die, and one or more non-orthogonal corners that are configured to reduce stress at an interface between the bonding surface and the die attach material. Related devices and fabrication methods are also discussed.

High reliability semiconductor devices and methods of fabricating the same

A switch comprises a first wafer having a thin-film structure defined thereon, a second wafer having a plurality of features defined therein, and a seal between the first wafer and the second wafer forming a two-wafer structure having a liquid metal microswitch defined therebetween.

Architecture and method of fabrication for a liquid metal microswitch (LIMMS)

Methods are provided for forming current perpendicular to the plane thin film read heads. In one embodiment, the method comprises the steps of forming a lower sensor lead, forming a lower sensor lead cladding of a low sputter yield material on the lower sensor lead, forming a sensor element on the lower sensor lead cladding, and forming an upper sensor lead coupled to the sensor element. The low sputter yield material helps to reduce redeposition of the lower sensor lead material onto side walls of the sensor element as the sensor element is being formed.

Methods for fabricating redeposition free thin film CPP read sensors

The present invention provides an improved current perpendicular to the plane thin film read head device and method of fabrication. With the present invention, the lower lead is formed to inhibit accumulation of redeposited lead material on CPP sensor element side walls during CPP sensor formation. In the preferred embodiment, the upper portion of the lower lead, which normally is etched during sensor element formation, is formed of a low sputter yield material to reduce redeposition flux to the sensor side walls. It is also preferred to form the upper portion of a material that also has a low value for the ratio of its sputter yield at the lead milling angle-to-its sputter yield at the side wall milling angle to inhibit redeposition accumulation on the side wall. It is preferred to clad conventional lead material with a low sputter yield ratio, low resistivity material, to inhibit side wall redeposition accumulation while also providing a low resistance lower lead. The underlying lead material may be formed of conventional low resistance lead materials with a cladding of a refractory metal, such as tantalum, titanium, tungsten, molybdenum, zirconium, vanadium, niobium, their alloys, or the like. The improved CPP read head of the present invention may be embodied in a data storage and retrieval apparatus.

Structure and method for redeposition free thin film CPP read sensor fabrication

The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer. In CIP and CPP embodiments, tapered portions of the bias material, which form overhanging the MR element, are removed by directional etching to improve the direction and stability of the induced longitudinal field within the MR element. In some CIP embodiments, tapered overhang removal allows for formation of improved lead structures, which may be deposited on the MR element closer to the side walls, and which are not pinched off by the overhang of an underlying bias layer, thus improving current density profile and definition of the actual effective track width of the device.

Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication

A method is disclosed by which precision alignment of optical fiber to wave-guide or other optical elements can be carried out with an adjustable microstructure in active alignment mode fiber attachment. A microstructure containing three elongated U-grooves can be combined effectively to produce a movable and adjustable V-groove structure, which can be used to achieve sub-micron scale alignment control with zero rotational torque. This device not only makes fiber alignment easy and fast but also maintains the fiber attachment position after alignment and epoxy bonding. Multiple fiber array alignment can be carried out with only a global alignment of two end fibers.

Method of active fiber alignment with movable V-groove precision control microstructures

Growing community of inventors

Fremont, CA, United States of America

Benjamin P Law