Intel Corporation

Benjamin Orr

Ayan Kar

Biswajeet Guha

Brian Joseph Greene

Kalyan C Kolluru

Chung-Hsun Lin

Nicholas A Thomson

Nathan Jack

Rui Ma

Brian S Doyle

Van H Le

Abhishek A Sharma

Rishabh Mehandru

Prashant Majhi

Kaan Oguz

Charles C Kuo

Elijah V Karpov

Curtis Tsai

Kevin Fischer

Urusa Alaan

Arnab Sen Gupta

Avyaya Jayanthinarasimham

Rohit Grover

Lin Hu

Sabih Omar

Embodiments disclosed herein include semiconductor devices with electrostatic discharge (ESD) protection of the transistor devices. In an embodiment, a semiconductor device comprises a semiconductor substrate, where a transistor device is provided on the semiconductor substrate. In an embodiment, the semiconductor device further comprises a stack of routing layers over the semiconductor substrate, and a diode in the stack of routing layers. In an embodiment, the diode is configured to provide electrostatic discharge (ESD) protection to the transistor device.

ESD protection decoupled from diffusion

Substrate-less silicon controlled rectifier (SCR) integrated circuit structures, and methods of fabricating substrate-less silicon controlled rectifier (SCR) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin portion and a second fin portion that meet at a junction. A plurality of gate structures is over the first fin portion and a second fin portion. A plurality of P-type epitaxial structures and N-type epitaxial structures is between corresponding adjacent ones of the plurality of gate structures. Pairs of the P-type epitaxial structures alternate with pairs of the N-type epitaxial structures.

Substrate-less silicon controlled rectifier (SCR) integrated circuit structures

Substrate-free integrated circuit structures, and methods of fabricating substrate-free integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a fin, a plurality of gate structures over the fin, and a plurality of alternating P-type epitaxial structures and N-type epitaxial structures between adjacent ones of the plurality of gate structures.

Substrate-free integrated circuit structures

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Portland, OR, United States of America

Benjamin Orr